LL4148, LL4448
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 27-Mar-13
1
Document Number: 85557
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon epitaxial planar diode
• Electrical data identical with the devices 1N4148
and 1N4448 respectively
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING
INTERNAL
CONSTRUCTION
REMARKS
LL4148
V
RRM
= 100 V,
V
F
= max. 1000 mV at I
F
= 50 mA
LL4148-GS08 or LL4148-GS18 - Single diode Tape and reel
LL4448
V
RRM
= 100 V,
V
F
= max. 1000 mV at I
F
= 100 mA
LL4448-GS08 or LL4448-GS18 - Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
100 V
Reverse voltage V
R
75 V
Peak forward surge current t
p
= 1 μs I
FSM
2A
Repetitive peak forward current I
FRM
500 mA
Forward continuous current I
F
300 mA
Average forward current V
R
= 0 I
F(AV)
150 mA
Power dissipation
(1)
P
tot
500 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
300 K/W
Junction temperature T
J
175 °C
Storage temperature range T
stg
- 65 to + 175 °C
