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DMN3016LSS-13

P1-P3P4-P6
DMN3016LSS
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
30V
12mΩ @ V
GS
= 10V
10.3 A
16mΩ @ V
GS
= 4.5V
9.3 A
Description
This MOSFET has been designed to minimize the on-
state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Backlighting
• Power Management Functions
• DC-DC Converters
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.076 grams (approximate)
Ordering Information (Note 4)
Case
SO-8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Chengdu A/T Site
Shanghai A/T Site
= Manufacturer’s Marking
N3016LS
= Product Type Marking Code
YYWW = Date Code Marking
YY
or YY = Year (ex: 14 = 2014)
WW = Week (01
- 53)
Y
Y = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y
Y = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1
4
8 5
N3016LS
WW
YY
1 4
8 5
N3016LS
WW
YY
SO-8
Top View
D
S
G
Equivalent Circuit
Pin1
D
S
S
S
G
D
D
D
Top View
Pin Configuration
e3
DMN3016LSS
Document number: DS36937 Rev.2 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN3016LSS
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10.3
8.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
13.4
10.6
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9.3
7.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
12.0
9.5
A
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
2.5
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
80
A
Avalanche Current (Note 7) L = 0.1mH
I
AS
22
A
Avalanche Energy (Note 7) L = 0.1mH
E
AS
25
mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.5
W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θ
JA
82
°C/W
t<10s
48
°C/W
Total Power Dissipation (Note 6)
P
D
2.0
W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θ
JA
60
°C/W
t<10s
37
°C/W
Thermal Resistance, Junction to Case
R
θ
JC
6.4
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30
—
—
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
—
—
1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.3
—
2.5
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
8
12
mΩ
V
GS
= 10V, I
D
= 12A
—
12
16
V
GS
= 4.5V, I
D
= 10A
Diode Forward Voltage
V
SD
—
0.7
1.0
V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
1415
—
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
119
—
Reverse Transfer Capacitance
C
rss
—
82
—
Gate resistance
R
g
—
2.6
3.2
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
11.3
—
nC
V
DS
= 15V, I
D
= 12A
Total Gate Charge (V
GS
= 10V)
Q
g
—
25.1
—
Gate-Source Charge
Q
gs
—
3.5
—
Gate-Drain Charge
Q
gd
—
3.6
—
Turn-On Delay Time
t
D(on)
—
4.8
—
ns
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.25Ω, R
G
= 3Ω,
Turn-On Rise Time
t
r
—
16.5
—
Turn-Off Delay Time
t
D(off)
—
26.1
—
Turn-Off Fall Time
t
f
—
5.6
—
Reverse Recovery Time
T
rr
—
8.5
—
ns
I
F
= 12A, di/dt = 500A/µs
Reverse Recovery Charge
Q
rr
—
7.0
—
nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting T
A
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN3016LSS
Document number: DS36937 Rev.2 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN3016LSS
NEW PRODUCT
ADVANCE INFORMATION
NEW PRODUCT
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I , DRAIN
CURRENT (A)
D
0
5
10
15
20
25
30
0
0.5 1 1.5 2
V = 2.2V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 4.0V
GS
V = 3.5V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I , DRAIN CURRENT (A)
D
0
5
10
15
20
25
30
0 0.5 1 1.5 2 2.5 3 3.5 4
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0 5 10 15 20 25 30
V = 4.5V
GS
V = 10V
GS
I , DRAIN CURRENT (A)
D
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
0.005
0.01
0.015
0.02
0.025
0.03
0 5 10 15 20 25 30
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
T , JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
J
°
R , DRA
IN-SOURCE
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
V=V
I = 10A
GS
D
10
V=V
I = 5A
GS
D
4.5
T , JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
J
°
R ,
DR
AIN-
SOU
RCE ON-RESISTANCE ( )
DS(ON)
Ω
0
0.004
0.008
0.012
0.016
0.02
0.024
-50 -25 0 25 50 75 100 125 150
V = 4.5V
I = 5A
GS
D
V=V
I = 10A
GS
D
10
DMN3016LSS
Document number: DS36937 Rev.2 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated
P1-P3P4-P6

DMN3016LSS-13

Mfr. #:
Buy DMN3016LSS-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V N-Ch Enh FET 20Vdss 1.5W
Lifecycle:
New from this manufacturer.
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