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SIDC20D60C6

P1-P3P4-P4
SIDC20D60C6
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4571M, Edition 1.1, 10.07.2006
Fast switching diode chip in EMCON 3 -Technology
This chip is used for:
• power module
• discrete components
FEATURES:
• 600V EMCON 3 technology 70 µm chip
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
Applications:
• drives
A
C
Chip Type V
R
I
F
Die Size Package
SIDC20D60C6
600V 75A 5.37 x 3.75 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size 5.37 x 3.75
Area total / active 20.14 / 16.66
Anode pad size 4.67 x 3.05
mm
2
Thickness 70 µm
Wafer size 150 mm
Flat position 180 deg
Max. possible chips per wafer 701 pcs
Passivation frontside Photoimide
Anode metallization 3200 nm AlSiCu
Cathode metallization
Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, ≤500µm
Reject ink dot size ∅ 0.65mm; max 1.2mm
Recommended storage environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
SIDC20D60C6
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4571M, Edition 1.1, 10.07.2006
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage V
RRM
600 V
Continuous forward current limited by
T
jmax
I
F
1 )
Maximum repetitive forward current
limited by T
jmax
I
FRM
150
A
Operating junction and storage
temperature
T
j
, T
stg
-40...+175
°C
1 )
depending on thermal properties of assembly
Static Electrical Characteristics (tested on chip), T
j
=25 °C, unless otherwise specified
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
Reverse leakage current I
R
V
R
=600V
T
j
=25°C
27 µA
Cathode-Anode
breakdown Voltage
V
Br
I
R
=0.25mA T
j
=25°C 600
V
Forward voltage drop V
F
I
F
=75A
T
j
=25°C
1.2 1.6 1.9 V
Dynamic Electrical Characteristics (verified by design/characterization), inductive load
Value
2)
Parameter Symbol
Conditions
min. Typ. max.
Unit
Peak reverse recovery
current
I
R M
I
F
=75A
di/dt=4000A/µs
V
R
=300V
V
GE
= -15V
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
100
115
125
A
Recovered charge
Q
r
I
F
=75A
di/dt=4000A/µs
V
R
=300V
V
GE
= -15V
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
3.00
6.00
7.50
µC
Reverse recovery energy
E
rec
I
F
=75A
di/dt=4000A/µs
V
R
=300V
V
GE
= -15V
T
j
= 25 °C
T
j
= 125 °C
T
j
= 150 °C
0.95
1.50
1.85
mJ
2)
values also influenced by parasitic L- and C- in measurement and package.
SIDC20D60C6
Edited by INFINEON Technologies, AIM PMD D CID CLS, L4571M, Edition 1.1, 10.07.2006
CHIP DRAWING:
P1-P3P4-P4

SIDC20D60C6

Mfr. #:
Buy SIDC20D60C6
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 75A WAFER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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