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STPS2L40ZFY

P1-P3P4-P6P7-P8
October 2016
DocID029441 Rev 1
1/8
This is information on a product in full production.
www.st.com
STPS2L40ZFY
Automotive low drop power Schottky rectifier
Datasheet - production data
Features
AEC-Q101 qualified
Very small conduction losses
Negligible switching losses
Low forward voltage drop
Surface mount miniature packages
Avalanche capability specified
PPAP capable
Description
Single chip Schottky rectifiers suited to switched
mode power supplies and high frequency DC to
DC converters.
Packaged in SOD123Flat, this device is
especially intended for surface mounting and
used in low voltage, high frequency inverters,
free-wheeling and polarity protection in
automotive applications.
Table 1: Device summary
Symbol
I
F(AV)
2 A
V
RRM
40 V
V
F
(typ.)
0.50 V
T
j
(max.)
175 °C
K
A
SOD123Flat
A
K
Characteristics
STPS2L40ZFY
2/8
DocID029441 Rev 1
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
T
j
= -40 °C to +175 °C
40
V
I
F(AV)
Average forward current
δ = 0.5, square wave
T
L
= 145 °C
2
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
50
A
P
ARM
Repetitive peak avalanche power
t
p
= 10 µs, T
j
= 125 °C
65
W
T
stg
Storage temperature range
-65 to +175
°C
T
j
Operating junction temperature range
(1)
-40 to +175
Notes:
(1)
(dP
tot
/dT
j
) < (1/R
th(j-a)
) condition to avoid thermal runaway for a diode on its own heatsink.
Table 3: Thermal parameters
Symbol
Parameter
Max. value
Unit
R
th(j-l)
Junction to lead
20
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
35
µA
T
j
= 125 °C
-
6
10
mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 2 A
-
0.63
V
T
j
= 125 °C
-
0.50
0.61
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.46 x I
F(AV)
+ 0.075 x I
F
2
(RMS)
For more information, please refer to the following application notes related to the power
losses.
AN604 (Calculation of conduction losses in a power rectifier)
AN4021 (Calculation of reverse losses in a power diode)
STPS2L40ZFY
Characteristics
DocID029441 Rev 1
3/8
1.1 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus ambient
temperature (δ = 0.5)
Figure 3: Normalized avalanche power derating
versus pulse duration (T
j
= 125 °C)
Figure 4: Relative variation of thermal impedance
junction to lead versus pulse duration
Figure 5: Reverse leakage current versus reverse
voltage applied (typical values)
Figure 6: Junction capacitance versus reverse
voltage applied (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1
T
δ
= tp/T
tp
I
F(AV)
(A)
P
F(AV)
(W)
I
F(AV)
(A)
0
1
2
3
4
5
6
7
0 25 50 75 100 125 150 175
T
δ
= tp/T
tp
T
amb
(°C)
R
th(j-a)
= R
th(j-l)
P (t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
Single pulse
SOD123 flat
Z
th(j-l)
/R
th(j-l)
t
p
(s)
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 5 10 15 20 25 30 35 40
T
j
= 150 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 75 °C
T
j
= 50 °C
V
R
(V)
I
R
(mA)
10
100
1000
1 10 100
F = 1 MHz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
V
R
(V)
C(pF)
P1-P3P4-P6P7-P8

STPS2L40ZFY

Mfr. #:
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Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers Automotive low drop power Schottky rectifier
Lifecycle:
New from this manufacturer.
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