OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

ZXM64N035GTA

P1-P3P4-P4
SUMMARY
V
(BR)DSS
= 35V: R
DS(on)
= 0.050 :I
D
= 6.7A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
·
Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT223 package
APPLICATIONS
·
50W Class D Audio Output Stage
·
Motor Control
DEVICE MARKING
·
ZXM6
4N035
ZXM64N035G
PROVISIONAL ISSUE A - JANUARY 2002
1
35V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL
SIZE
TAPE
WIDTH
QUANTITY
PER REEL
ZXM64N035GTA 7” 12mm 1000 units
ZXM64N035GTC 13” 12mm 4000 units
ORDERING INFORMATION
Top View
ZXM64N035G
PROVISIONAL ISSUE A - JANUARY 2002
2
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
V
DSS
35 V
Gate-Source Voltage
V
GS
⫾20 V
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)
(V
GS
=10V; T
A
=70°C)(b)
(V
GS
=10V; T
A
=25°C)(a)
I
D
6.7
5.4
4.8
A
Pulsed Drain Current (c)
I
DM
30 A
Continuous Source Current (Body Diode) (b)
I
S
2.4 A
Pulsed Source Current (Body Diode)(c)
I
SM
30 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
2.0
16
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
3.9
31
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)
R
θJA
62.5 °C/W
Junction to Ambient (b)
R
θJA
32 °C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ZXM64N035G
PROVISIONAL ISSUE A - JANUARY 2002
3
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V
(BR)DSS
35 V
I
D
=250µA, V
GS
=0V
Zero Gate Voltage Drain Current
I
DSS
1 ␮A
V
DS
=35V, V
GS
=0V
Gate-Body Leakage
I
GSS
100 nA
V
GS
=⫾20V, V
DS
=0V
Gate-Source Threshold Voltage
V
GS(th)
1.0 V
I
D
=250␮A, V
DS
=V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.050
0.062
⍀
⍀
V
GS
=10V, I
D
=3.7A
V
GS
=4.5V, I
D
=1.9A
Forward Transconductance (1)(3)
g
fs
4.3 S
V
DS
=10V,I
D
=1.9A
DYNAMIC (3)
Input Capacitance
C
iss
950 pF
V
DS
=25V, V
GS
=0V,
f=1MHz
Output Capacitance
C
oss
200 pF
Reverse Transfer Capacitance
C
rss
50 pF
SWITCHING(2) (3)
Turn-On Delay Time
t
d(on)
4.2 ns
V
DD
=15V, I
D
=3.7A
R
G
=6.0⍀, V
GS
=10V
Rise Time
t
r
4.6 ns
Turn-Off Delay Time
t
d(off)
20.5 ns
Fall Time
t
f
8ns
Total Gate Charge
Q
g
27 nC
V
DS
=24V,V
GS
=10V,
I
D
=3.7A
Gate-Source Charge
Q
gs
5nC
Gate-Drain Charge
Q
gd
4.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95 V
T
J
=25⬚C, I
S
=3.7A,
V
GS
=0V
Reverse Recovery Time (3)
t
rr
24.5 ns
T
J
=25⬚C, I
F
=3.7A,
di/dt= 100A/␮s
Reverse Recovery Charge (3)
Q
rr
19.1 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle ⱕ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
P1-P3P4-P4

ZXM64N035GTA

Mfr. #:
Buy ZXM64N035GTA
Manufacturer:
Diodes Incorporated
Description:
MOSFET 35V N-Chnl
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet