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NSS1C201MZ4T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
March, 2013 − Rev. 4
1 Publication Order Number:
NSS1C201MZ4/D
NSS1C201MZ4,
NSV1C201MZ4
100 V, 2.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage V
CEO
100 Vdc
Collector-Base Voltage V
CBO
140 Vdc
Emitter-Base Voltage V
EBO
7.0 Vdc
Collector Current − Continuous I
C
2.0 A
Collector Current − Peak I
CM
3.0 A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1)
800
6.5
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
155 °C/W
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 2)
2.0
15.6
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
64 °C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Note 3)
710 mW
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 7.6 mm
2
, 1 oz. copper traces.
2. FR−4 @ 645 mm
2
, 1 oz. copper traces.
3. Thermal response.
COLLECTOR
2,4
1
BASE
3
EMITTER
http://onsemi.com
100 VOLTS, 2.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
Device Package Shipping
†
ORDERING INFORMATION
NSS1C201MZ4T1G
NSV1C201MZ4T1G
SOT−223
(Pb−Free)
1000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SOT−223
CASE 318E
STYLE 1
MARKING
DIAGRAM
Top View Pinout
C
CEB
4
123
1
1C201G
AYW
A = Assembly Location
Y = Year
W = Work Week
1C201 = Specific Device Code
G = Pb−Free Package
NSS1C201MZ4T3G SOT−223
(Pb−Free)
4000/
Tape & Reel
PIN ASSIGNMENT
NSS1C201MZ4, NSV1C201MZ4
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0) V
(BR)CEO
100 Vdc
Collector− Base Breakdown Voltage (I
C
= 0.1 mAdc, I
E
= 0) V
(BR)CBO
140 Vdc
Emitter− Base Breakdown Voltage (I
E
= 0.1 mAdc, I
C
= 0) V
(BR)EBO
7.0 Vdc
Collector Cutoff Current (V
CB
= 140 Vdc, I
E
= 0) I
CBO
100 nA
Emitter Cutoff Current (V
EB
= 6.0 Vdc) I
EBO
50 nA
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 10 mA, V
CE
= 2.0 V)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
h
FE
150
120
80
40
360
Collector− Emitter Saturation Voltage (Note 4)
(I
C
= 0.1 A, I
B
= 0.010 A)
(I
C
= 0.5 A, I
B
= 0.050 A)
(I
C
= 1.0 A, I
B
= 0.100 A)
(I
C
= 2.0 A, I
B
= 0.200 A)
V
CE(sat)
0.030
0.060
0.100
0.180
V
Base − Emitter Saturation Voltage (Note 4)
(I
C
= 1.0 A, I
B
= 0.100 A)
V
BE(sat)
1.10
V
Base − Emitter Turn−on Voltage (Note 4) (I
C
= 1.0 A, V
CE
= 2.0 V) V
BE(on)
0.850 V
Cutoff Frequency (I
C
= 100 mA, V
CE
= 5.0 V, f = 100 MHz) f
T
100 MHz
Input Capacitance (V
EB
= 0.5 V, f = 1.0 MHz) Cibo 305 pF
Output Capacitance (V
CB
= 3.0 V, f = 1.0 MHz) Cobo 22 pF
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
TYPICAL CHARACTERISTICS
Figure 1. Power Derating
T, TEMPERATURE (°C)
150125100755025
0
0.5
1.0
1.5
2.0
2.5
P
D
, POWER DISSIPATION (W)
T
C
T
A
NSS1C201MZ4, NSV1C201MZ4
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. DC Current Gain
0
40
80
120
160
200
240
280
320
360
400
0.001 0.01 0.1 1 10
Figure 3. DC Current Gain
I
C
, COLLECTOR CURRENT (A)
h
RE
, DC CURRENT GAIN
150°C
25°C
−55°C
V
CE
= 2 V
0
40
80
120
160
200
240
280
320
360
400
0.001 0.01 0.1 1 10
h
RE
, DC CURRENT GAIN
Figure 4. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A)
150°C
25°C
−55°C
V
CE
= 4 V
0.01
0.1
1
0.001 0.01 0.1 1 10
150°C
−55°C
25°C
V
BE(sat)
, COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
Figure 5. Collector−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A)
I
C
/I
B
= 10
0.01
0.1
1
0.001 0.01 0.1 1 10
25°C
−55°C
150°C
I
C
/I
B
= 20
V
CE(sat)
, COLLECTOR−EMITTER
SATURATOIN VOLTAGE (V)
Figure 6. Base−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001 0.01 0.1 1 10
Figure 7. Base−Emitter Saturation Voltage
I
C
, COLLECTOR CURRENT (A)
V
BE(sat)
, BASE−EMITTER SATUR-
ATOIN VOLTAGE (V)
I
C
/I
B
= 10
25°C
150°C
−55°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.001 0.01 0.1 1 10
I
C
, COLLECTOR CURRENT (A)
V
BE(sat)
, BASE−EMITTER SATUR-
ATOIN VOLTAGE (V)
I
C
/I
B
= 50
25°C
150°C
−55°C
P1-P3P4-P5

NSS1C201MZ4T1G

Mfr. #:
Buy NSS1C201MZ4T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100V, NPN Low VCE Trans.
Lifecycle:
New from this manufacturer.
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