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VS-MURB2020CTTRLP

P1-P3P4-P6P7-P9P10-P10
VS-MURB2020CTPbF, VS-MURB2020CT-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
4
Document Number: 94083
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
0
94083_05
3
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
160
170
180
See note (1)
150
DC
140
130
69
Square wave (D = 0.50)
Rated V
R
applied
12 15
0
94083_06
6
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
39
3
6
15
9
12
12
15
RMS limit
100
94083_07
1000
t
rr
(ns)
dI
F
/dt (A/μs)
20
40
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
30
50
10
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
0
100
94083_08
1000
Q
rr
(nC)
dI
F
/dt (A/μs)
50
250
150
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
100
200
0
I
F
= 20 A
I
F
= 10 A
I
F
= 5 A
VS-MURB2020CTPbF, VS-MURB2020CT-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
5
Document Number: 94083
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
VS-MURB2020CTPbF, VS-MURB2020CT-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
6
Document Number: 94083
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
2
- Ultrafast MUR series
3
- B = D
2
PAK/TO-262
4 - Current rating (20 = 20 A)
5
- Voltage rating (20 = 200 V)
6
- CT = center tap (dual) TO-220/D
2
PAK/TO-262
7
-
-1 = TO-262
None = D
2
PAK
8
-
None = tube (50 pieces)
TRL = tape and reel (left oriented, for D
2
PAK package)
9
-
PbF = lead (Pb)-free
P = lead (Pb)-free (for D
2
PAK TRR and TRL)
TRR = tape and reel (right oriented, for D
2
PAK package)
Device code
51
32 4
6 7 8 9
VS- MUR B 20 20 CT -1 TRL PbF
1 - Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
SPICE model www.vishay.com/doc?95622
P1-P3P4-P6P7-P9P10-P10

VS-MURB2020CTTRLP

Mfr. #:
Buy VS-MURB2020CTTRLP
Manufacturer:
Vishay
Description:
Rectifiers 200 Volt 20 Amp
Lifecycle:
New from this manufacturer.
Delivery:
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