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N25Q128A13ESFH0E TR

P1-P3P4-P4
Micron Serial NOR Flash Memory
Addendum
3V, Multiple I/O, 4KB Sector Erase
N25Q128A13ESFH0E/F
Features
This data sheet addendum provides automotive AC
specifications for the N25Q 128Mb, 3V device. The val-
ues specified in this addendum replace the same val-
ues listed in the general market 128Mb 3V data sheet.
This addendum does not provide detailed information
of the device. The N25Q 128Mb, 3V general market da-
ta sheet should be referenced for a complete descrip-
tion of device functionality, operating modes, and
specifications.
• SPI-compatible serial bus interface
• 108 MHz (MAX) clock frequency
• 2.7–3.6V single supply voltage
• Dual/quad I/O instruction provides increased
throughput up to 432 MHz
• Supported protocols
– Extended SPI, dual I/O, and quad I/O
• Execute-in-place (XIP) mode for all three protocols
– Configurable via volatile or nonvolatile registers
– Enables memory to work in XIP mode directly af-
ter power-on
• PROGRAM/ERASE SUSPEND operations
• Continuous read of entire memory via a single com-
mand
– Fast read
– Quad or dual output fast read
– Quad or dual I/O fast read
• Flexible to fit application
– Configurable number of dummy cycles
– Output buffer configurable
• Software reset
• 64-byte, user-lockable, one-time programmable
(OTP) dedicated area
• Erase capability
– Subsector erase 4KB uniform granularity blocks
– Sector erase 64KB uniform granularity blocks
– Full-chip erase
• Write protection
– Software write protection applicable to every
64KB sector via volatile lock bit
– Hardware write protection: protected area size
defined by five nonvolatile bits (BP0, BP1, BP2,
BP3, and TB)
– Additional smart protections, available upon re-
quest
• Electronic signature
– JEDEC-standard 2-byte signature (BA18h)
– Unique ID code (UID): 17 read-only bytes, in-
cluding:
• Two additional extended device ID (EDID)
bytes to identify device factory options
• Customized factory data (14 bytes)
• Minimum 100,000 ERASE cycles per sector
• More than 20 years data retention
• Package JEDEC standard, all RoHS compliant
– SF = SOP2-16 300 mils body width (SO16W)
128Mb, 3V, Multiple I/O Serial NOR Flash Memory
Features
PDF: 09005aef85174d81
addendum_n25q_128mb_3v_65nm.pdf - Rev. B 05/13 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
AC Characteristics and Operating Conditions
The N25Q 128Mb automotive-grade devices support a derating on deselect time
(
t
SHSL1) after a READ command.
Table 1: AC Characteristics and Operating Conditions
Parameter Symbol Min Typ
1
Max Unit Notes
Clock frequency for all commands other than
READ (SPI-ER, QIO-SPI protocol)
f
C DC – 108 MHz
Clock frequency for READ commands
f
R DC – 54 MHz
Clock HIGH time
t
CH 4 – – ns 2
Clock LOW time
t
CL 4 – – ns 1
Clock rise time (peak-to-peak)
t
CLCH 0.1 – – V/ns 3, 4
Clock fall time (peak-to-peak)
t
CHCL 0.1 – – V/ns 3, 4
S# active setup time (relative to clock)
t
SLCH 4 – – ns
S# not active hold time (relative to clock)
t
CHSL 4 – – ns
Data in setup time
t
DVCH 2 – – ns
Data in hold time
t
CHDX 3 – – ns
S# active hold time (relative to clock)
t
CHSH 4 – – ns
S# not active setup time (relative to clock)
t
SHCH 4 – – ns
S# deselect time after a READ command
t
SHSL1 14 – – ns
S# deselect time after a nonREAD command
t
SHSL2 50 – – ns
Output disable time
t
SHQZ – – 8 ns 3
Clock LOW to output valid under 30pF
t
CLQV – – 7 ns
Clock LOW to output valid under 10pF – – 5 ns
Output hold time (clock LOW)
t
CLQX 1 – – ns
Output hold time (clock HIGH)
t
CHQX 1 – – ns
HOLD command setup time (relative to clock)
t
HLCH 4 – – ns
HOLD command hold time (relative to clock)
t
CHHH 4 – – ns
HOLD command setup time (relative to clock)
t
HHCH 4 – – ns
HOLD command hold time (relative to clock)
t
CHHL 4 – – ns
HOLD command to output Low-Z
t
HHQX – – 8 ns 3
HOLD command to output High-Z
t
HLQZ – – 8 ns 3
Write protect setup time
t
WHSL 20 – – ns 5
Write protect hold time
t
SHWL 100 – – ns 5
Enhanced V
PPH
HIGH to S# LOW for extended
and dual I/O page program
t
VPPHSL 200 – – ns 6
WRITE STATUS REGISTER cycle time
t
W – 1.3 8 ms
Write NONVOLATILE CONFIGURATION REGIS-
TER cycle time
t
WNVCR – 0.2 3 s
CLEAR FLAG STATUS REGISTER cycle time
t
CFSR – 40 – ns
128Mb, 3V, Multiple I/O Serial NOR Flash Memory
AC Characteristics and Operating Conditions
PDF: 09005aef85174d81
addendum_n25q_128mb_3v_65nm.pdf - Rev. B 05/13 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
Table 1: AC Characteristics and Operating Conditions (Continued)
Parameter Symbol Min Typ
1
Max Unit Notes
WRITE VOLATILE CONFIGURATION REGISTER
cycle time
t
WVCR – 40 – ns
WRITE VOLATILE ENHANCED CONFIGURATION
REGISTER cycle time
t
WRVECR – 40 – ns
PAGE PROGRAM cycle time (256 bytes)
t
PP – 0.5 5 ms 7
PAGE PROGRAM cycle time (n bytes) – int(n/8) ×
0.015
8
5 ms 7
PAGE PROGRAM cycle time, V
PP
= V
PPH
(256
bytes)
– 0.4 5 ms 7
PROGRAM OTP cycle time (64 bytes) – 0.2 – ms 7
Subsector ERASE cycle time
t
SSE – 0.25 0.8 s
Sector ERASE cycle time
t
SE – 0.7 3 s
Sector ERASE cycle time (with V
PP
= V
PPH
) – 0.6 3 s
Bulk ERASE cycle time
t
BE – 170 250 s
Bulk ERASE cycle time (with V
PP
= V
PPH
) – 160 250 s
Notes:
1. Typical values given for T
A
= 25 °C.
2.
t
CH +
t
CL must add up to 1/
f
C.
3. Value guaranteed by characterization; not 100% tested.
4. Expressed as a slew-rate.
5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS
REGISTER WRITE is set to 1.
6. V
PPH
should be kept at a valid level until the PROGRAM or ERASE operation has comple-
ted and its result (success or failure) is known.
7. When using the PAGE PROGRAM command to program consecutive bytes, optimized
timings are obtained with one sequence including all the bytes versus several sequences
of only a few bytes (1 < n < 256).
8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4
int(15.3) =16.
128Mb, 3V, Multiple I/O Serial NOR Flash Memory
AC Characteristics and Operating Conditions
PDF: 09005aef85174d81
addendum_n25q_128mb_3v_65nm.pdf - Rev. B 05/13 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2013 Micron Technology, Inc. All rights reserved.
P1-P3P4-P4

N25Q128A13ESFH0E TR

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Manufacturer:
Micron
Description:
IC FLASH 128M SPI 108MHZ 16SOP2
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