DHG 40 C 1200 HB
preliminary
ns
Sonic Fast Recovery Diode
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
150
I A
V
F
2.24
R 0.90 K/W
V
R
=
2 1 3
min.
20
t = 10 ms
Applications:
V
RRM
V1200
25T
VJ
V°C=
T
VJ
°C=mA0.4
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
= 95°C
d =
P
tot
140 WT
C
°C=
T
VJ
150 °C-55
I
=
=
1200
20
20
T
VJ
= 45°C
DHG 40 C 1200 HB
1200
V1200
25
25
25
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
2.89
T
VJ
°C=25
C
J
unction capacitance
V = V; T
125
V
F0
V1.29T
VJ
= 150°C
r
F
43
f = 1 MHz = °C25
mΩ
V2.24T
VJ
=°C
I
F
=A
V
20
3.15
I
F
=A40
I
F
=A40
2x
threshold voltage
slope resistance
for power loss calculation only
Backside: cathode
15 A
T
VJ
=°C
reverse recovery time
A20
200
350
ns
(50 Hz), sine
t
= 200 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
R
VJ
I
RM
max. reverse recovery current
I
F
=A;20
25
T=125°C
VJ
-di
F
=A/µs400/dtt
rr
V
R
=V600
T
VJ
=°C25
T=125°C
VJ
µA
8600 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutatin
switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
125
IXYS reserves the right to change limits, conditions and dimensions.
©
20110808a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
