Micro Commercial Components
MCC
TM
Revision: A 2013/03/08
www.mccsemi.com
2 of 4
Electrical characteristics (T
a
=25
o
C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Units
Static
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =-250µA -8
Gate-source threshold voltage VGS(th) VDS =V
GS
, ID =-250µA -0.5
-0.9
V
Gate-source leakage I
GSS
VDS =0V, VGS =±8V
±100
nA
Zero gate voltage drain current I
DSS
VDS =-8V, VGS =0V
-1
µA
VGS =-4.5V, ID =-3.5A
0.045
VGS =-2.5V, ID =-3A
0.060
Drain-source on-state resistance
a
RDS(on)
VGS =-1.8V,ID=-2.0A
0.090
Forward transconductance
a
gfs VDS =-5V, ID =-4.1A
6
S
Dynamic
Input capacitance
b,c
C
iss
740
Output capacitance
b,c
C
oss
290
Reverse transfer capacitance
b,c
C
rss
V
DS =-4V,VGS =0V,f =1MHz
190
pF
VDS =-4V,VGS =-4.5V,
I
D =-4.1A
7.8 15
Total gate charge
b
Q
g
4.5 9
Gate-source charge
b
Q
gs
1.2
Gate-drain charge
b
Q
gd
V
DS =-4V,VGS =-2.5V,
I
D =-4.1A
1.6
nC
Gate resistance
b,c
R
g
f =1MHz
1.4
7 14
Turn-on delay time
b,c
td(on)
13 20
Rise time
b,c
tr
35 53
Turn-off Delay time
b,c
td(off)
32 48
Fall time
b,c
tf
V
DD
=-4V,
R
L
=1.2 ,ID=-3.3A,
V
GEN
=-4.5V,Rg=1
10 20
Turn-on delay time
b,c
td(on)
5 10
Rise time
b,c
tr
11 17
Turn-off delay time
b,c
td(off)
22 33
Fall time
b,c
tf
V
DD
=-4V,
R
L
=1.2 ,ID =-3.3A,
V
GEN
=-8V,Rg=1
16 24
ns
Drain-source body diode characteristics
Continuous source-drain diode current I
S
T
C
=25
o
C
-1.4
Pulse diode forward current
a
I
SM
-10
A
Body ciode voltage V
SD
I
F
=-3.3A
-0.8
-1.2
V
Note :
a. Pulse
Test ; Pulse Width_ 300µs, Duty Cycle _ 2%.
b. Guaranteed by design, not subject to production testing.
c. These parameters have no way to verify.
Ω
Ω
Ω
Ω
Ω
Ω
< <
SI2305
