1 - 5© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
320
VWI 35-06P1
Features
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
- fast switching
• FRED diodes
- fast reverse recovery
- low forward voltage
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
Typical Applications
• AC drives
• power supplies with power factor
correction
IGBTs
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 600 V
V
GES
±
20 V
I
C25
T
C
= 25°C 31 A
I
C80
T
C
= 80°C 21 A
I
CM
V
GE
= ±15 V; R
G
= 47 Ω; T
VJ
= 125°C 40 A
V
CEK
RBSOA, Clamped inductive load; L = 100 µH V
CES
t
SC
V
CE
= 600 V; V
GE
= ±15 V; R
G
= 47 Ω; T
VJ
= 125°C 10 µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 100 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25°C 1.9 2.4 V
T
VJ
= 125°C 2.2 V
V
GE(th)
I
C
= 0.5 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;V
GE
= 0 V; T
VJ
= 25°C 0.6 mA
T
VJ
= 125°C 0.7 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 100 nA
t
d(on)
50 ns
t
r
55 ns
t
d(off)
300 ns
t
f
30 ns
E
on
0.9 mJ
E
off
0.7 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 1100 pF
Q
Gon
V
CE
= 300 V; V
GE
= 15 V; I
C
= 20 A 65 nC
R
thJC
(per IGBT) 1.3 K/W
R
thJH
with heatsink compound (0.42 K/m.K; 50 µm) 2.5 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82 Ω
I
C25
= 31 A
V
CES
= 600 V
V
CE(sat) typ.
= 1.9 V
IGBT Module
Sixpack in ECO-PAC 2
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
www.ixys.net
S 9
G 1
L 9
N 5
A 1
F 3
C 1
X 18
W 14
K 10
N 9
R 5
D 5
A 5
H 5
Pin arangement see outlines
