July 2007 Rev 2 1/17
17
STP40NF20 - STF40NF20
STB40NF20 - STW40NF20
N-channel 200V - 0.038 -40A- D
2
PAK/TO-220/TO-220FP/TO-247
Low gate charge STripFET™ Power MOSFET
Features
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Excellent figure of merit (R
DS
*Q
g
)
100% avalanche tested
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters.
Applications
Switching application
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
P
W
STB40NF20 200V <0.045 40A 160W
STP40NF20 200V <0.045 40A 160W
STF40NF20 200V <0.045 40A 40W
STW40NF20 200V <0.045 40A 160W
D
2
PAK
1
2
3
1
3
TO-247
TO-220
1
2
3
TO-220FP
www.st.com
Table 1. Device summary
Order codes Marking Package Packaging
STB40NF20 40NF20 D
2
PAK Tape & reel
STP40NF20 40NF20 TO-220 Tube
STF40NF20 40NF20 TO-220FP Tube
STW40NF20 40NF20 TO-247 Tube
Contents STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
2/17
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20 Electrical ratings
3/17
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220
D
2
PAK
TO-247
TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 200 V
V
GS
Gate- source voltage ± 20 V
I
D
(1)
1. Value limited by wire bonding
Drain current (continuous) at T
C
= 25°C 40 A
I
D
(1)
Drain current (continuous) at T
C
= 100°C 25 A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 160 A
P
tot
Total dissipation at T
C
= 25°C 160 40 W
Derating Factor 1.28 0.32 W/°C
dv/dt
(3)
3. I
SD
40A, di/dt 200A/µs, V
DD
V
(BR)DSS
, Tj T
JMAX
Peak diode recovery voltage slope 12 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1s; Tc = 25°C)
-- 2500 V
T
stg
Storage temperature
-55 to 150 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter
TO-220
D
2
PAK
TO-247 TO-220FP Unit
Rthj-case Thermal resistance junction-case max 0.78 3.1 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 50 62.5 °C/W
T
J
Maximum lead temperature for soldering
purpose
(1)
1. for 10 sec. 1.6mm from case
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Max value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
40 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
230 mJ

STF40NF20

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET Low charge STripFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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