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NSTB1005DXV5T1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2010
October, 2010 − Rev. 1
1 Publication Order Number:
NSTB1005DXV5/D
NSTB1005DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. The NSTB1005DXV5T1
contains two complementary BRT devices are housed in the SOT−553
package which is ideal for low power surface mount applications
where board space is at a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch Tape and Reel
• This is a Pb−Free Device
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
P
D
357
2.9
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient (Note 1)
R
q
JA
350 °C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C (Note 1)
Derate above 25°C (Note 1)
P
D
500
4.0
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient (Note 1)
R
q
JA
250 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad
MARKING DIAGRAM
45
Q1
Q2
R1
R1
R2
312
http://onsemi.com
SOT−553
CASE 463B
UC M G
G
1
5
1
5
UC = Specific Device Code
M = Date Code
G =Pb−Free Package
Device Package Shipping
†
ORDERING INFORMATION
NSTB1005DXV5T1G SOT−553
(Pb−Free)
4000/Tape &
Reel
R2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
NSTB1005DXV5T1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Q1 TRANSISTOR: PNP − OFF CHARACTERISTICS
Collector−Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
− − 100 nAdc
Collector−Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0) I
CEO
− − 500 nAdc
Emitter−Base Cutoff Current (V
EB
= 6.0 V, I
C
= 0) I
EBO
− − 0.1 mAdc
Collector−Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector−Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 − − Vdc
ON CHARACTERISTICS
DC Current Gain
h
FE
80 140 −
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA) V
CE(sat)
− − 0.25 Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2 Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − − Vdc
Input Resistor R1 32.9 47 61.1
kW
Resistor Ratio R
1
/R
2
0.8 1.0 1.2
Q2 TRANSISTOR: NPN − OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0) I
CBO
− − 100 nAdc
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0) I
CEO
− − 500 nAdc
Emitter-Base Cutoff Current (V
EB
= 6.0, I
C
= 0) I
EBO
− − 0.1 mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − − Vdc
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0) V
(BR)CEO
50 − − Vdc
DC Current Gain (V
CE
= 10 V, I
C
= 5.0 mA) h
FE
80 140 −
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA) V
CE(SAT)
− − 0.25 Vdc
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2 Vdc
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9 − − Vdc
Input Resistor R1 33 47 61
kW
Resistor Ratio R1/R2 0.8 1.0 1.2
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
T
A
, AMBIENT TEMPERATURE (°C)
P
D
, POWER DISSIPATION (MILLIWATTS)
R
q
JA
= 833°C/W
NSTB1005DXV5T1G
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS − PNP TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
=-25°C
25°C
1 2 3 4 5
6 7 8 9 10
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40
50
1000
1 10 100
I
C
, COLLECTOR CURRENT (mA)
T
A
=75°C
-25°C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
T
A
=-25°C
25°C
75°C
75°C
I
C
/I
B
= 10
50
010203040
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
0
T
A
=-25°C
25°C
75°C
25°C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
P1-P3P4-P5

NSTB1005DXV5T1G

Mfr. #:
Buy NSTB1005DXV5T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA Complementary 50V Dual NPN & PNP
Lifecycle:
New from this manufacturer.
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