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BSL207SPH6327XTSA1

P1-P3P4-P6P7-P8
2013-11-06
Page 7
Rev. 2.05
BSL207SP
13 Typ. avalanche energy
E
AS
= f (T
j
), par.: I
D
= -6 A
V
DD
= -10 V, R
GS
= 25 Ω
25 50 75 100
°C
150
T
j
0
5
10
15
20
25
30
35
mJ
45
E
AS
14 Typ. gate charge
|V
GS
|
= f (Q
Gate
)
parameter: I
D
= -6 A pulsed
0 4 8 12 16 20
nC
28
|Q
Gate
|
0
1
2
3
4
5
6
7
8
9
10
V
12
- V
GS
0.2 VDS max.
0.5 VDS max.
0.8 VDS max.
15 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60 -20 20 60 100
°C
180
T
j
-18
-18.5
-19
-19.5
-20
-20.5
-21
-21.5
-22
-22.5
-23
-23.5
V
-24.5
BSL207SP
V
(BR)DSS
2013-11-06
Page 8
Rev. 2.05
BSL207SP
P1-P3P4-P6P7-P8

BSL207SPH6327XTSA1

Mfr. #:
Buy BSL207SPH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET SMALL SIGNAL+P-CH
Lifecycle:
New from this manufacturer.
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