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IXYH50N65C3H1
P1-P3
P4-P6
P7-P8
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N65C3H1
Fi
g. 11. For
w
ard-B
i
as Safe O
perati
ng Ar
ea
0.01
0.1
1
10
100
1000
1
10
100
1000
V
DS
- V
o
lts
I
D
-
Am
per
es
T
J
= 175º
C
T
C
= 25
º
C
Sin
gle Pu
ls
e
25µs
1ms
10ms
V
CE
(s
at
)
Limi
t
100µs
Fi
g. 1
1. Maxi
mum Transi
ent Thermal
I
mpedance
0.01
0.1
1
0.00001
0.0001
0.001
0
.
01
0
.
1
1
Pu
lse W
idth
- Seco
n
d
Z
(th)J
C
- ºC
/ W
Fi
g. 12.
M
axim
um T
ransi
ent T
hermal I
mpedance
aasss
0.
4
Fi
g. 7. Transconducta
nce
0
5
10
15
20
25
30
35
40
45
0
1
0
2
03
04
05
0
6
07
08
09
0
1
0
0
1
1
0
I
C
- A
mp
e
re
s
g
f s
-
Si
emens
T
J
= - 40
ºC
25º
C
150º
C
Fi
g. 10. R
ev
erse-
B
i
as Safe O
perati
ng Ar
ea
0
20
40
60
80
100
100
200
300
400
500
600
700
V
CE
- Vo
lts
I
C
- A
mp
e
re
s
T
J
= 15
0º
C
R
G
= 5
dv
/ dt
< 10V /
n
s
Fi
g.
8. Gate Charge
0
2
4
6
8
10
12
14
16
0
1
0
2
03
04
05
06
0
7
08
0
Q
G
- Nano
C
o
ul
o
m
b
s
V
GE
- V
o
lts
V
CE
= 325V
I
C
= 36A
I
G
= 10
mA
Fi
g.
9. Capacitance
10
100
1,
000
10,
000
0
5
10
15
20
25
30
35
40
V
CE
- V
o
lts
Capacit
an
ce -
Pi
coFarad
s
f
= 1 MH
z
C
ies
C
oes
C
res
© 2014 IXYS CORPORATION, All Rights Reserved
IXYH50N65C3H1
Fi
g. 13. Induct
i
v
e Sw
it
chi
ng Energy
Loss v
s.
Gat
e Resi
stance
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
5
1
01
5
2
02
53
03
5
4
04
5
R
G
- O
hms
E
of
f
- M
illiJ
o
u
le
s
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
T
J
= 150º
C , V
GE
= 15V
V
CE
= 4
00
V
I
C
= 36
A
I
C
= 54A
Fi
g. 16. Induct
i
v
e Turn-
off S
w
i
tchi
ng Ti
mes v
s.
G
ate R
esi
stance
20
30
40
50
60
70
80
5
1
01
5
2
02
53
03
54
04
5
R
G
- Ohm
s
t
f i
- Nanoseconds
0
80
160
240
320
400
480
t
d(
off)
-
Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 150º
C
, V
GE
= 15
V
V
CE
= 4
0
0V
I
C
= 36
A
I
C
= 54A
Fi
g. 14. Induct
i
v
e Sw
it
chi
ng Energy
Loss v
s.
Col
l
ector Cur
rent
0.0
0.2
0.4
0.6
0.8
1.0
1.2
18
22
2
6
30
34
38
42
46
50
54
I
C
-
Amper
es
E
off
- M
illiJ
o
u
le
s
0.0
0.6
1.2
1.8
2.4
3.0
3.6
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15V
V
CE
= 4
00
V
T
J
= 150º
C
T
J
= 25
º
C
Fi
g. 15
. I
nducti
v
e Sw
i
tchi
ng Energy
Loss v
s.
Juncti
on Temperatur
e
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
1
50
T
J
-
Degr
ees Cen
ti
gra
de
E
of
f
- MilliJou
les
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
E
on
- M
illiJ
o
u
le
s
E
off
E
on
- - - -
R
G
= 5
,
V
GE
= 15
V
V
CE
= 400V
I
C
= 36
A
I
C
= 54
A
Fi
g. 17
. I
nducti
v
e Turn-off Sw
i
tc
hi
ng Ti
mes v
s.
Coll
ec
to
r Curre
nt
0
10
20
30
40
50
60
70
80
90
18
2
2
26
30
34
38
42
46
50
54
I
C
-
Amper
es
t
f i
-
Nanosecond
s
50
60
70
80
90
100
110
120
130
140
t
d
(o
ff)
-
Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 40
0V
T
J
= 150º
C
T
J
= 25º
C
Fi
g.
18. I
nducti
v
e Turn-off Sw
i
tching Ti
mes v
s.
Juncti
on Tempe
ratur
e
10
20
30
40
50
60
70
25
50
75
100
125
150
T
J
-
Degr
e
es Cen
ti
gr
a
de
t
f i
-
Nanosecond
s
60
70
80
90
100
110
120
t
d
(o
ff)
-
Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
I
C
= 54
A
I
C
= 36
A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYH50N65C3H1
Fi
g. 20. I
nducti
v
e Tur
n-on S
w
it
chi
ng Ti
mes v
s.
Col
l
ector C
urr
e
nt
0
10
20
30
40
50
60
70
18
22
26
30
34
38
42
46
50
54
I
C
- Am
p
e
re
s
t
r i
- N
a
n
o
s
e
c
o
n
d
s
16
18
20
22
24
26
28
30
t
d(on)
-
Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
T
J
= 150º
C
T
J
= 25º
C
Fi
g. 21. Indu
cti
v
e
Tur
n-on Sw
i
tchi
ng Ti
mes v
s.
Juncti
on Temperat
ure
10
20
30
40
50
60
70
80
90
25
50
75
100
125
150
T
J
-
Degr
ees Cen
ti
gra
de
t
r i
-
Nanosecond
s
19
20
21
22
23
24
25
26
27
t
d(
on)
-
Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 5
, V
GE
= 15V
V
CE
= 400V
I
C
= 54A
I
C
= 36A
Fi
g. 19. In
ducti
v
e
Tur
n-on S
w
i
tchi
ng Ti
mes v
s
.
G
ate Resi
stance
20
40
60
80
100
120
140
5
1
01
52
0
2
53
03
54
04
5
R
G
- Ohm
s
t
r i
- N
a
n
o
s
e
c
o
n
d
s
0
20
40
60
80
100
120
t
d
(
on
)
-
Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 150º
C, V
GE
= 15
V
V
CE
= 400V
I
C
= 54A
I
C
= 36A
Fi
g. 22. M
axi
mum Peak Load Cur
rent v
s. Fr
equency
10
20
30
40
50
60
70
80
90
100
10
100
1,000
f
max
- Ki
lo
Hertz
I
C
- A
m
p
e
re
s
T
J
= 150º
C
T
C
= 75º
C
V
CE
= 400V
V
GE
= 15V
R
G
= 5
Du
ty
Cy
cl
e =
50
%
Squ
are W
av
e
Tr
i
a
ng
ula
r
W
a
ve
P1-P3
P4-P6
P7-P8
IXYH50N65C3H1
Mfr. #:
Buy IXYH50N65C3H1
Manufacturer:
Littelfuse
Description:
IGBT Transistors 650V/130A XPTI C3-Class TO-247
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
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