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DG2733EDQ-T1-GE3

P1-P3P4-P6P7-P9P10-P10
DG2535E, DG2733E
www.vishay.com
Vishay Siliconix
S17-0156-Rev. A, 30-Jan-17
1
Document Number: 75646
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
0.3 , Low Voltage Dual SPDT Analog Switches
DESCRIPTION
The DG2535E and DG2733E are low voltage, low
on-resistance, dual single-pole/double-throw (SPDT)
monolithic CMOS analog switches designed for high
performance switching of analog signals. Combining
low-power, high speed, low on-resistance, and small
package size, the DG2535E and DG2733E are ideal for
portable and battery powered applications.
The DG2535E and DG2733E have an operation range from
1.65 V to 5.5 V single supply. The DG2535E has two
separate control pins for independent control of the two
SPDT switches. The DG2733E has an EN pin to enable the
device when the logic is high.
The DG2535E and DG2733E have guaranteed 1.65 V logic
compatible, allowing easy interface with low voltage DSP or
MCU control logic.
The switches conduct signals within the power rails equally
well in both directions when on, and blocks up to the power
supply level when off. Break-before-make is guaranteed.
The DG2535E and DG2733E are built on Vishay Siliconix's
sub micron CMOS low voltage process technology and
provide greater than 400 mA latch-up protection, as tested
per JESD78A.
The DG2535E and DG2733E are available in lead (Pb)-free
10-lead DFN and SOIC packages.
FEATURES
• 1.65 V to 5.5 V single power operation
•0.3 typ. switch on resistance at V+ = 5 V
•Fast switching:
t
ON
= 55 ns at 2.7 V, t
OFF
= 15 ns at 2.7 V
• Latch-up current > 400 mA (JESD78)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Low switch resistance
• Low voltage logic compatible
• Wide operation voltage range
•Fast switching time
APPLICATIONS
• Audio and video signal routing
• Battery operated systems
• Relay replacement
• Automatic test equipment
• Process control and automation
• Data acquisition systems
• Meters and instruments
• Medical and healthcare systems
• PCMCIA cards
• Communication systems
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
NO2
COM2
IN2
1
2
3
10
9
Top View Top View
V+
NO1
COM1
8
DG2535E
NC2
GND
4
5
7
IN1
NC1
6
NO2
COM2
EN
1
2
3
10
9
V+
NO1
COM1
8
DG2733E
NC2
GND
4
5
7
IN
NC1
6
TRUTH TABLE DG2535E
IN1, IN2 NC1, NC2 NO1, NO2
0ONOFF
1OFFON
TRUTH TABLE DG2733E
IN EN NC1, NC2 NO1, NO2
0 1 ON OFF
11OFFON
00OFFOFF
10OFFOFF
DG2535E, DG2733E
www.vishay.com
Vishay Siliconix
S17-0156-Rev. A, 30-Jan-17
2
Document Number: 75646
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4 mW/C above 70 °C.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C
MSOP10
DG2535EDQ-T1-GE3
DG2733EDQ-T1-GE3
DFN-10
DG2535EDN-T1-GE4
DG2733EDN-T1-GE4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Reference to GND
V+ -0.3 V to +6 V
V
IN, COM, NC, NO
a
-0.3 V to (V+ + 0.3)
Current (any terminal except NO, NC or COM) 30
mAContinuous current (NO, NC, or COM) ± 300
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 500
Storage temperature (D suffix) -65 to +150 °C
Power dissipation (packages)
b
miniQFN10
c
208 mW
Latch up current JESD78A > 400 mA
ESD - HBM ANSI / ESDA / JEDEC
®
JS-001 > 5000
VESD - CDM JESD22-C101 > 1000
ESD - MM JESD22-A115 > 200
DG2535E, DG2733E
www.vishay.com
Vishay Siliconix
S17-0156-Rev. A, 30-Jan-17
3
Document Number: 75646
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
SPECIFICATIONS
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE SPECIFIED
V+ = 3 V, ± 10 %,V
IN
= 0.4 V or 1.65 V
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
b
TYP.
c
MAX.
b
Analog Switch
Analog signal range
d
V
analog
R
DS(on)
Full 0 - V+ V
On-resistance R
DS(on)
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 0.5 V
Room - 0.5 0.7
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 1.5 V
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 0.5 V
Full - 0.6 -
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 1.5 V
V+ = 5.5 V, I
NO/NC
= 100 mA, V
COM
= 0.9 V
Room -
0.3
0.5
V+ = 5.5 V, I
NO/NC
= 100 mA, V
COM
= 2.5 V 0.25
V+ = 5.5 V, I
NO/NC
= 100 mA, V
COM
= 0.9 V
Full - 0.4 -
V+ = 5.5 V, I
NO/NC
= 100 mA, V
COM
= 2.5 V
R
ON
match
d
R
ON
V+ = 2.7 V, I
NO/NC
= 100 mA,
V
COM
= 0.5 V, 1.5 V
Room - 0.06 0.08
V+ = 5.5 V, I
NO/NC
= 100 mA,
V
COM
= 0.9 V, 2.5 V
R
ON
resistance flatness
d
R
ON
flatness
V+ = 2.7 V, I
NO/NC
= 100 mA,
V
COM
= 0.5 V, 1.5 V
Room - - 0.15
Switch off leakage
current
I
NO/NC(off)
V+ = 5 V, V
NO/NC
= 0.5 V / 4.5 V,
V
COM
= 4.5 V / 0.5 V
Room -8 - 8
nA
Full -50 - 50
I
COM(off)
Room -8 - 8
Full -50 - 50
Channel-on leakage
current
I
COM(on)
V+ = 5 V, V
NO/NC
= V
COM
= 4.5 V / 0.5 V
Room
Full
-10 - 10
-50 - 50
Digital Control
Input high voltage V
INH
V+ = 3 V
Full 1.65 - -
V
Input low voltage V
INL
Full - - 0.4
Input high voltage V
INH
V+ = 5 V
Full 1.8 - -
Input low voltage V
INL
Full - - 0.6
Input capacitance C
IN
Full - 6 - pF
Input current I
INL
or I
INH
V
IN
= 0 or V+ Full -1 - 1 μA
Dynamic Characteristics
Break-Before-Make time
e
t
BBM
V+ = 3.6 V, V
NO
, V
NC
= 1.5 V, R
L
= 50 ,
C
L
= 35 pF
Room 1 15 -
ns
Turn-on time
e
t
ON
Room - 28 78
Full - - 80
Turn-off time
e
t
OFF
Room - 13 58
Full - - 60
Off-isolation
d
OIRR
R
L
= 50 , C
L
= 5 pF, f = 100 kHz Room
--70-
dB
Crosstalk
d
X
TALK
--90-
3 dB bandwidth
d
R
L
= 50 , C
L
= 5 pF Room - 120 - MHz
NO, NC off capacitance
d
C
NO(off)
V
IN
= 0 V, or V+, f = 1 MHz Room
-40-
pF
C
NC(off)
-40-
Channel on capacitance
d
C
NO(on)
- 120 -
C
NC(on)
- 120 -
Power Supply
Power supply range V+ - 1.65 - 5.5 V
Power supply current I+ V
IN
= 0 or V+ Full - - 1 μA
P1-P3P4-P6P7-P9P10-P10

DG2733EDQ-T1-GE3

Mfr. #:
Buy DG2733EDQ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs SPDT 0.3ohm Low Volt 1.65 to 5.5V
Lifecycle:
New from this manufacturer.
Delivery:
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