VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series
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Vishay Semiconductors
Revision: 12-Feb-16
2
Document Number: 94888
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 105 °C, 180° conduction half sine wave 10
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 135
10 ms sine pulse, no voltage reapplied 160
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 91
A
2
s
10 ms sine pulse, no voltage reapplied 130
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 1290 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
10 A, T
J
= 25 °C 1.1 V
Forward slope resistance r
t
T
J
= 150 °C
20 m
Threshold voltage V
F(TO)
0.82 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.05
mA
T
J
= 150 °C 0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.5
°C/W
Maximum thermal resistance,
junction to ambient (PCB mount)
R
thJA
(1)
62
Soldering temperature T
S
260 °C
Approximate weight
2g
0.07 oz.
Marking device Case style TO-263AB (D
2
PAK)
10ETS08S
10ETS10S
10ETS12S
