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2SA2154MFV-GR(TPL3

P1-P3P4-P4
2SA2154MFV
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154MFV
General-Purpose Amplifier Applications
• High voltage and high current
: V
CEO
= −50 V, I
C
= −150 mA (max)
• Excellent h
FE
linearity
: h
FE
(I
C
= −0.1 mA)/h
FE
(I
C
= −2 mA) = 0.95 (typ.)
• High h
FE :
h
FE
= 120 to 400
• Complementary to 2SC6026MFV
Absolute Maximum Ratings
(Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions
(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm)
Mount Pad Dimensions (Reference)
Unit: mm
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-1L1A
Weight: 1.5 mg (typ.)
VESM
1.BASE
2.EMITTER
3.COLLECTOR
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage V
CEO
−50 V
Emitter-base voltage V
EBO
−5 V
Collector current I
C
−150 mA
Base current I
B
−30 mA
Collector power dissipation P
C
150* mW
Junction temperature T
j
150 °C
Storage temperature range T
stg
−55 to 150 °C
1
2
3
0.80 ± 0.05
0.32 ± 0.05
0.22 ± 0.05
0.8 ± 0.05
0.4
1.2 ± 0.05
1.2 ± 0.05
0.13 ± 0.05
0.5 ± 0.05
1
0.4
0.5
0.45
0.4
0.4
1.15
0.45
0.4
Start of commercial production
2005-02
2SA2154MFV
2014-03-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Collector cutoff current I
CBO
V
CB
= −50 V, I
E
= 0 ⎯ ⎯ −0.1 μA
Emitter cutoff current I
EBO
V
EB
= −5 V, I
C
= 0 ⎯ ⎯ −0.1 μA
DC current gain h
FE
(Note) V
CE
= −6 V, I
C
= −2 mA 120 ⎯ 400 ⎯
Collector-emitter saturation voltage V
CE (sat)
I
C
= −100 mA, I
B
= −10 mA ⎯ −0.18 −0.3 V
Transition frequency f
T
V
CE
= −10 V, I
C
= −1 mA 80 ⎯ ⎯ MHz
Collector output capacitance C
ob
V
CB
= −10 V, I
E
= 0, f = 1 MHz ⎯ 1.6 ⎯ pF
Note: h
FE
classification Y (Y): 120 to 240, GR (G): 200 to 400
( ) marking symbol
Marking
PY
Type Name
h
FE
Classification
2SA2154MFV
2014-03-01
3
PC - Ta
0
50
100
150
200
250
0 50 100 150 200
IC - VCE
-0
-20
-40
-60
-80
-100
-120
-0 -1 -2 -3 -4 -5 -6 -7
0
0
IB = -0.1mA
-0.2
-0.3
-0.5
-0.7
-1.0
-1.5
-2.0
hFE - IC
10
100
1000
-0.1 -1 -10 -100
-25
25Ta = 100°C
VCE(sat) - IC
-0.01
-0.1
-1
-0.1 -1 -10 -100
Ta = 100°C
-25
25
VBE(sat) - IC
-0.1
-1
-10
-0.1 -1 -10 -100
IB - VBE
-0.1
-1
-10
-100
-1000
-0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4
BASE CURRENT
　
IB (uA)
Ta = 100°C
-25
25
0
COLLECTOR CURRENT IC
(
mA
)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
BASE-EMITTER SATURATION
VOLTAGE VBE
(
sat
)
(
V
)
COLLECTOR POWER DISSIPATION PC (mV)
AMBIENT TEMPERATURE Ta (°C)
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER
　　　
VCE =
−
6V
　　　
VCE =
−
1V
COMMON EMITTER
　
Ta = 25°C
COMMON EMITTER
IC/IB = 10
COMMON EMITTER
IC/IB = 10
COMMON EMITTER
VCE =
−
6V
Ta = 100°C25
-25
Mounted on FR4 board
　　　　　
(25.4 mm × 25.4 mm × 1.6 mmt)
P1-P3P4-P4

2SA2154MFV-GR(TPL3

Mfr. #:
Buy 2SA2154MFV-GR(TPL3
Manufacturer:
Toshiba
Description:
Bipolar Transistors - BJT -150mA -50V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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