MCP1602
DS22061A-page 4 © 2007 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
IN
- A
GND
......................................................................+6.0V
All Other I/O ..............................(A
GND
- 0.3V) to (V
IN
+ 0.3V)
LX to P
GND
............................................. -0.3V to (V
IN
+ 0.3V)
Output Short Circuit Current..................................Continuous
Power Dissipation (Note 6) ..........................Internally Limited
Storage Temperature.................................... -65
o
C to +150
o
C
Ambient Temp. with Power Applied................ -40
o
C to +85
o
C
Operating Junction Temperature.................. -40
o
C to +125
o
C
ESD Protection On All Pins:
HBM..............................................................................3 kV
MM...............................................................................200V
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V
IN
= 3.6V, C
OUT
= C
IN
= 4.7 µF, L = 4.7 µH,
V
OUT
(ADJ) = 1.8V, I
OUT
= 100 mA, T
A
= +25°C. Boldface specifications apply for the T
A
range of -40
o
C to +85
o
C.
Parameters Sym Min Typ Max Units Conditions
Input Characteristics
Input Voltage V
IN
2.7 — 5.5 V Note 1
Maximum Output Current I
OUT
500 ——mANote 1
Shutdown Current I
IN_SHDN
— 0.05 1 µA SHDN = GND
Quiescent Current I
Q
—4560 µA SHDN = V
IN
, I
OUT
= 0 mA
Shutdown/UVLO/Thermal Shutdown Characteristics
SHDN
, Logic Input Voltage Low V
IL
——15 %V
IN
V
IN
= 2.7V to 5.5V
SHDN
, Logic Input Voltage High V
IH
45 ——%V
IN
V
IN
= 2.7V to 5.5V
SHDN, Input Leakage Current V
L_SHND
-1.0 ±0.1 1.0 µA V
IN
= 2.7V to 5.5V, SHDN =A
GND
Undervoltage Lockout UVLO 2.40 2.55 2.70 VV
IN
Falling
Undervoltage Lockout Hystere-
sis
UVLO
HYS
— 200 — mV
Thermal Shutdown T
SHD
— 150 — °C Note 5, Note 6
Thermal Shutdown Hysteresis T
SHD-HYS
—10— °CNote 5, Note 6
Output Characteristics
Adjustable Output Voltage
Range
V
OUT
0.8 — 4.5 V Note 2
Reference Feedback Voltage V
FB
—0.8— V
Feedback Input Bias Current I
VFB
— -1.5 — nA
Note 1: The minimum V
IN
has to meet two conditions: V
IN
≥ 2.7V and V
IN
≥ V
OUT
+ 0.5V.
2: Reference Feedback Voltage Tolerance applies to adjustable output voltage setting.
3: V
R
is the output voltage setting.
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load
regulation is tested over a load range of 0.1 mA to the maximum specified output current. Changes in
output voltage due to heating effects are covered by the thermal regulation specification.
5: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
temperature and the thermal resistance from junction to air (i.e. T
A
, T
J
, θ
JA
). Exceeding the maximum
allowable power dissipation causes the device to initiate thermal shutdown.
6: The internal MOSFET switches have an integral diode from the L
X
pin to the V
IN
pin, and from the L
X
pin
to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits
must be adhered too. Thermal protection is not able to limit the junction temperature for these cases.
7: The current limit threshold is a cycle-by-cycle current limit.
