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VB20100S-E3/4W

P1-P3P4-P6
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
1
Document Number: 88975
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.446 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
20 A
V
RRM
100 V
I
FSM
250 A
V
F
at I
F
= 20 A 0.69 V
T
J
max. 150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Diode variation Single die
V20100S VF20100S
VI20100SVB20100S
PIN 1
PIN 2
PIN 3
K
1
2
3
1
K
2
3
TO-220AB
TO-263AB
NC
A
K
HEATSINK
NC
A
K
PIN 1
PIN 2
PIN 3
PIN 1
PIN 2
CASE
PIN 3
TO-262AA
TMBS
®
ITO-220AB
1
2
3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20100S VF20100S VB20100S VI20100S UNIT
Max. repetitive peak reverse voltage V
RRM
100 V
Max. average forward rectified current (fig. 1) I
F(AV)
20 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
250 A
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH E
AS
210 mJ
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
I
RRM
1.0 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)
From terminal to heatsink t = 1 min
V
AC
1500 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
2
Document Number: 88975
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 10 mA T
A
= 25 °C V
BR
105 (min.) - V
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.51 -
V
I
F
= 10 A 0.60 -
I
F
= 20 A 0.79 0.90
I
F
= 5 A
T
A
= 125 °C
0.45 -
I
F
= 10 A 0.53 -
I
F
= 20 A 0.69 0.76
Reverse current
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
17 - μA
T
A
= 125 °C 7 - mA
V
R
= 100 V
T
A
= 25 °C 70 500 μA
T
A
= 125 °C 14 30 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V20100S VF20100S VB20100S VI20100S UNIT
Typical thermal resistance R
JC
2.0 4.0 2.0 2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V20100S-E3/4W 1.88 4W 50/tube Tube
ITO-220AB VF20100S-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB20100S-E3/4W 1.37 4W 50/tube Tube
TO-263AB VB20100S-E3/8W 1.37 8W 800/reel Tape and reel
TO-262AA VI20100S-E3/4W 1.45 4W 50/tube Tube
Case Temperature (°C)
Average Forward Current (A)
24
20
16
12
4
0
0 25 50 75 100 125 150 175
V20100S
VI20100S
VF20100S
VB20100S
Resistive or Inductive Load
8
0
2
4
6
8
10
12
14
16
18
20
0 4 8 12 16 20 24
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
Average Power Loss (W)
D = t
p
/T t
p
T
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3
www.vishay.com
Vishay General Semiconductor
Revision: 13-Dec-16
3
Document Number: 88975
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Typical Transient Thermal Impedance
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
10
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
V(B,I)20100S
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
VF20100S
P1-P3P4-P6

VB20100S-E3/4W

Mfr. #:
Buy VB20100S-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 20 Amp 100 Volt Single TrenchMOS
Lifecycle:
New from this manufacturer.
Delivery:
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