VS-CPV364M4KPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
1
Document Number: 94488
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT SIP Module
(Short Circuit Rated Ultrafast IGBT)
FEATURES
• Short circuit rated ultrafast: optimized for high
speed, and short circuit rated to 10 μs at 125 °C,
V
GE
= 15 V
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
•HEXFRED
®
soft ultrafast diodes
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
Notes
(1)
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 μH, R
G
= 10 (see fig. 19)
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
V
CES
600 V
I
RMS
per phase (3.1 kW total)
with T
C
= 90 °C
11 A
RMS
T
J
125 °C
Supply voltage 360 V
DC
Power factor 0.8
Modulation depth (see fig. 1) 115 %
V
CE(on)
(typical)
at I
C
= 13 A, 25 °C
1.8 V
Speed 8 kHz to 30 kHz
Package SIP
Circuit configuration Three phase inverter
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 24
A
T
C
= 100 °C 13
Pulsed collector current I
CM
(1)
48
Clamped inductive load current I
LM
(2)
48
Short circuit withstand time t
SC
T
C
= 100 °C 9.3 μs
Gate to emitter voltage V
GE
± 20 V
Isolation voltage V
ISOL
t = 1 min, any terminal to case 2500 V
RMS
Maximum power dissipation, each IGBT P
D
T
C
= 25 °C 63
W
T
C
= 100 °C 25
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150
°C
Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf in
(N m)
