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MTA16ATF2G64HZ-2G3H1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR4 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 12: Module and Component Speed Grades
DDR4 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G6 -075
-2G4 -083E
-2G3 -083
-2G1 -093E
-1G9 -107E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the edge connector of the module, not at the DRAM.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
16GB (x64, DR) 260-Pin DDR4 SODIMM
DRAM Operating Conditions
09005aef8620ddd0
atf16c2gx64hz.pdf – Rev. F 9/16 EN
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 13: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision A)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
800 720 640 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
48 48 48 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
920 840 760 mA
Precharge standby current I
DD2N
2
880 800 720 mA
Precharge standby ODT current I
DD2NT
1
800 720 640 mA
Precharge power-down current I
DD2P
2
560 480 400 mA
Precharge quite standby current I
DD2Q
2
800 720 720 mA
Active standby current I
DD3N
2
960 880 880 mA
Active standby I
PP
current I
PP3N
2
48 48 48 mA
Active power-down current I
DD3P
2
640 640 560 mA
Burst read current I
DD4R
1
1680 1440 1400 mA
Burst read I
DDQ
current I
DDQ4R
1
840 760 680 mA
Burst write current I
DD4W
1
1680 1520 1400 mA
Burst refresh current (1x REF) I
DD5B
1
2080 2040 2000 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
264 264 264 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
2
480 480 480 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
2
560 560 560 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
2
400 400 400 mA
Auto self refresh current (25°C) I
DD6A
2
320 320 320 mA
Auto self refresh current (45°C) I
DD6A
2
400 400 400 mA
Auto self refresh current (75°C) I
DD6A
2
560 560 560 mA
Auto self refresh I
PP
current I
PP6X
2
80 80 80 mA
Bank interleave read current I
DD7
1
2000 1880 1800 mA
Bank interleave read I
PP
current I
PP7
1
144 144 144 mA
Maximum power-down current I
DD8
2
320 320 320 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x64, DR) 260-Pin DDR4 SODIMM
I
DD
Specifications
09005aef8620ddd0
atf16c2gx64hz.pdf – Rev. F 9/16 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 14: DDR4 I
DD
Specifications and Conditions – 16GB (Die Revision B)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 2400 2133 Units
One bank ACTIVATE-PRECHARGE current I
DD0
1
608 584 560 mA
One bank ACTIVATE-PRECHARGE, wordline boost, I
PP
current I
PP0
1
48 48 48 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
1
704 680 656 mA
Precharge standby current I
DD2N
2
560 544 528 mA
Precharge standby ODT current I
DD2NT
1
600 600 560 mA
Precharge power-down current I
DD2P
2
400 400 400 mA
Precharge quite standby current I
DD2Q
2
480 480 480 mA
Active standby current I
DD3N
2
736 688 640 mA
Active standby I
PP
current I
PP3N
2
48 48 48 mA
Active power-down current I
DD3P
2
624 592 560 mA
Burst read current I
DD4R
1
1368 1280 1200 mA
Burst write current I
DD4W
1
1256 1184 1120 mA
Burst refresh current (1x REF) I
DD5B
1
2200 2200 2200 mA
Burst refresh I
PP
current (1x REF) I
PP5B
1
248 248 248 mA
Self refresh current: Normal temperature range (0°C to 85°C) I
DD6N
2
480 480 480 mA
Self refresh current: Extended temperature range (0°C to 95°C) I
DD6E
2
560 560 560 mA
Self refresh current: Reduced temperature range (0°C to 45°C) I
DD6R
2
320 320 320 mA
Auto self refresh current (25°C) I
DD6A
2
137.6 1.37.6 137.6 mA
Auto self refresh current (45°C) I
DD6A
2
320 320 320 mA
Auto self refresh current (75°C) I
DD6A
2
480 480 480 mA
Auto self refresh I
PP
current I
IPP6X
2
80 80 80 mA
Bank interleave read current I
DD7
1
1640 1600 1560 mA
Bank interleave read I
PP
current I
PP7
1
144 144 144 mA
Maximum power-down current I
DD8
2
400 400 400 mA
Notes:
1. One module rank in the active I
DD/PP
, the other rank in I
DD2P/PP3N
.
2. All ranks in this I
DD/PP
condition.
16GB (x64, DR) 260-Pin DDR4 SODIMM
I
DD
Specifications
09005aef8620ddd0
atf16c2gx64hz.pdf – Rev. F 9/16 EN
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MTA16ATF2G64HZ-2G3H1

Mfr. #:
Buy MTA16ATF2G64HZ-2G3H1
Manufacturer:
Micron
Description:
MODULE DDR4 UDIMM
Lifecycle:
New from this manufacturer.
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