V
RRM
= 20 V - 100 V
I
F
= 400 A
Features
• High Surge Capability TO-244AB Package
• Types up to 100 V V
RRM
Parameter Symbol MBRF40020 (R) MBRF40030 (R) Unit
Repetitive peak reverse
MBRF40020 thru MBRF40040R
MBRF40040 (R)
MBRF40035 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
Diode
Conditions
voltage
RRM
RMS reverse voltage
V
RMS
14 21 V
DC blocking voltage
V
DC
20 30 V
Continuous forward current
I
F
400 400 A
Operating temperature
T
j
-40 to 175 -40 to 175 °C
Storage temperature
T
stg
-40 to 175 -40 to 175 °C
Parameter Symbol MBRF40020 (R) MBRF40030 (R) Unit
Diode forward voltage 0.65 0.65
55
200 200
Thermal characteristics
Thermal resistance, junction
- case
R
thJC
0.35 0.35 °C/W
200
A3000
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
Reverse current
I
R
V
F
V
R
= 20 V, T
j
= 25 °C
I
F
= 200 A, T
j
= 25 °C
T
C
≤ 125 °C
Conditions
25
3000 3000
-40 to 175
400 400
3000
-40 to 175
MBRF40040 (R)
55
MBRF40035 (R)
0.35
V
R
= 20 V, T
j
= 125 °C
0.35
0.65 0.65
200
mA
V
-40 to 175 -40 to 175
T
C
= 25 °C, t
p
= 8.3 ms
28
4035
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