© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_96N25T (7W) 08-10-07
IXTH96N25T IXTQ96N25T
IXTV96N25T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
10
12
14
16
18
20
22
24
45 50 55 60 65 70 75 80 85 90 95 100
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 2.5
Ω
V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
10
12
14
16
18
20
22
24
2345678910
R
G
- Ohms
t
r
- Nanoseconds
19
20
21
22
23
24
25
26
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 48A, 96A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
14
16
18
20
22
24
26
28
30
32
34
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
52
54
56
58
60
62
64
66
68
70
72
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2.5
Ω
, V
GS
= 15V
V
DS
= 125V
I
D
= 48A
I
D
= 96A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
16
18
20
22
24
26
28
30
32
45 50 55 60 65 70 75 80 85 90 95 100
I
D
- Amperes
t
f
- Nanoseconds
52
54
56
58
60
62
64
66
68
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2.5
Ω
, V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
10
12
14
16
18
20
22
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2.5
Ω
V
GS
= 15V
V
DS
= 125V
I
D
= 96A
I
D
= 48A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
10
20
30
40
50
60
70
2345678910
R
G
- Ohms
t
f
- Nanoseconds
40
60
80
100
120
140
160
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 48A, 96A
