© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 2
1 Publication Order Number:
NTTFS5826NL/D
NTTFS5826NL
Power MOSFET
60 V, 24 mW, Single N−Channel, m8FL
Features
• Small Footprint (3.3 x 3.3 mm) for Compact Designs
• Low Q
G(TOT)
to Minimize Switching Losses
• Low Capacitance to Minimize Driver Losses
• These are Pb−Free Devices
Applications
• Motor Drivers
• DC−DC Converters
• Synchronous Rectification
• Power Management
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 V
Gate−to−Source Voltage V
GS
"20 V
Continuous Drain
Current R
Y
J−mb
(Notes 1, 2, and 3)
Steady
State
T
mb
= 25°C
I
D
20
A
T
mb
= 100°C 14
Power Dissipation
R
Y
J−mb
(Notes 1, 2,
and 3)
T
mb
= 25°C
P
D
19
W
T
mb
= 100°C 10
Continuous Drain
Current R
q
JA
(Notes 1
& 3)
T
A
= 25°C
I
D
8
A
T
A
= 100°C 6
Power Dissipation
R
q
JA
(Notes 1 & 3)
T
A
= 25°C
P
D
3.1
W
T
A
= 100°C 1.6
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
133 A
Operating Junction and Storage Temperature T
J
, T
stg
−55 to
175
°C
Source Current (Body Diode) I
S
20 A
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 14.4 A, L = 1.0 mH, R
G
= 25 W)
E
AS
20 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
R
Y
J−mb
7.9
°C/W
Junction−to−Ambient − Steady State (Note 3)
R
q
JA
48
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
ORDERING INFORMATION
http://onsemi.com
Device Package Shipping
†
V
(BR)DSS
R
DS(on)
MAX I
D
MAX
60 V
24 mW @ 10 V
20 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
32 mW @ 4.5 V
NTTFS5826NLTAG WDFN8
(Pb−Free)
1500/Tape & Reel
(Note: Microdot may be in either location)
1
5826 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
NTTFS5826NLTWG WDFN8
(Pb−Free)
5000/Tape & Reel
5826
AYWWG
G
D
D
D
D
S
S
S
G
N−Channel
D
S
G
