AT29LV010A-12JC Datasheet AT29LV010A-15JI, AT29LV010A-20JI, AT29LV010A-12JC | P1-P3

Features

• Single Supply Voltage, Range 3V to 3.6V

• 3-volt Only Read and Write Operation

• Software Protected Programming

• Fast Read Access Time – 120 ns

• Low Power Dissipation

– 15 mA Active Current

– 40 µA CMOS Standby Current

• Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 1024 Sectors (128 Bytes/Sector)

– Internal Address and Data Latches for 128 Bytes

• Two 8K Bytes Boot Blocks with Lockout

• Fast Sector Program Cycle Time – 20 ms

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Typical Endurance > 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Commercial and Industrial Temperature Ranges

1. Description

The AT29LV010A is a 3-volt only in-system Flash programmable and erasable read

only memory (Flash). Its 1 megabit of memory is organized as 131,072 bytes by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 120 ns with power dissipation of just 54 mW over the commercial tem-

perature range. When the device is deselected, the CMOS standby current is less

than 40 µA. The device endurance is such that any sector can typically be written to in

excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29LV010A does not require

high input voltages for programming. Three-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

EPROM. Reprogramming the AT29LV010A is performed on a sector basis; 128 bytes

of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA

polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

1-megabit

(128K x 8)

3-volt Only

Flash Memory

AT29LV010A

Not Recommended

for New Designs.

Use AT29BV010A.

0520F–FLASH–9/08

AT29LV010A

2. Pin Configurations

2.1 32-lead PLCC Top View

2.2 32-lead TSOP Top View – Type 1

Pin Name Function

A0 - A16 Addresses

CE Chip Enable

Output Enable

Write Enable

I/O0 - I/O7 Data Inputs/Outputs

NC No Connect

I/O0

A14

A13

A11

A10

I/O7

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O6

A12

A15

A16

VCC

A11

A13

A14

VCC

A16

A15

A12

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

0520F–FLASH–9/08

AT29LV010A

3. Block Diagram

4. Device Operation

4.1 Read

The AT29LV010A is accessed like an EPROM. When CE and OE are low and WE is high, the

data stored at the memory location determined by the address pins is asserted on the outputs.

The outputs are put in the high impedance state whenever CE

or OE is high. This dual-line con-

trol gives designers flexibility in preventing bus contention.

4.2 Software Data Protection Programming

The AT29LV010A has 1024 individual sectors, each 128 bytes. Using the software data protec-

tion feature, byte loads are used to enter the 128 bytes of a sector to be programmed. The

AT29LV010A can only be programmed or reprogrammed using the software data protection fea-

ture. The device is programmed on a sector basis. If a byte of data within the sector is to be

changed, data for the entire 128-byte sector must be loaded into the device. The data in any

byte that is not loaded during the programming of its sector will be indeterminate. The

AT29LV010A automatically does a sector erase prior to loading the data into the sector. An

erase command is not required.

Software data protection protects the device from inadvertent programming. A series of three

program commands to specific addresses with specific data must be presented to the device

before programming may occur. The same three program commands must begin each program

operation. All software program commands must obey the sector program timing specifications.

Power transitions will not reset the software data protection feature; however, the software fea-

ture will guard against inadvertent program cycles during power transitions.

Any attempt to write to the device without the 3-byte command sequence will start the internal

write timers. No data will be written to the device; however, for the duration of t

, a read opera-

tion will effectively be a polling operation.

After the software data protection’s 3-byte command code is given, a byte load is performed by

applying a low pulse on the WE

or CE input with CE or WE low (respectively) and OE high. The

address is latched on the falling edge of CE

or WE, whichever occurs last. The data is latched by

the first rising edge of CE

or WE.

The 128 bytes of data must be loaded into each sector. Any byte that is not loaded during the

programming of its sector will be erased to read FFh. Once the bytes of a sector are loaded into

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P16

AT29LV010A-12JC

Mfr. #:

Buy AT29LV010A-12JC

Manufacturer:

Microchip Technology / Atmel

Description:

NOR Flash 1M (128K X 8) 3.3V- 120NS COM TEMP

Lifecycle:

New from this manufacturer.

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AT29LV010A-12JC

AT29LV010A-12JC

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