OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NUD3105LT1G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2002
October, 2016 − Rev. 12
1 Publication Order Number:
NUD3105/D
NUD3105
Integrated Relay,
Inductive Load Driver
This device is used to switch inductive loads such as relays,
solenoids incandescent lamps , and small DC motors without the need
of a free−wheeling diode. The device integrates all necessary items
such as the MOSFET switch, ESD protection, and Zener clamps. It
accepts logic level inputs thus allowing it to be driven by a large
variety of devices including logic gates, inverters, and
microcontrollers.
Features
• Provides a Robust Driver Interface Between DC Relay Coil and
Sensitive Logic Circuits
• Optimized to Switch Relays from 3.0 V to 5.0 V Rail
• Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V
• Internal Zener Eliminates the Need of Free−Wheeling Diode
• Internal Zener Clamp Routes Induced Current to Ground for Quieter
Systems Operation
• Low V
DS(on)
Reduces System Current Drain
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Typical Applications
• Telecom: Line Cards, Modems, Answering Machines, FAX
• Computers and Office: Photocopiers, Printers, Desktop Computers
• Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette
Recorders
• Industrial:Small Appliances, Security Systems, Automated Test
Equipment, Garage Door Openers
• Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches,
Lamp Drivers
Device Package Shipping
†
ORDERING INFORMATION
MARKING
DIAGRAMS
SOT−23
(TO−236)
CASE 318
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
RELAY/INDUCTIVE
LOAD DRIVER
0.5 AMPERE, 8.0 VOLT CLAMP
NUD3105LT1G SOT−23
(Pb−Free)
www.onsemi.com
1
JW4 M G
G
JW4 = Device Code
M = Date Code*
D = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
3000 / Tape &
Reel
SC−74
CASE 318F
STYLE 7
JW4 D G
G
NUD3105DMT1G SOT−74
(Pb−Free)
3000 / Tape &
Reel
1
6
SZNUD3105DMT1G SOT−74
(Pb−Free)
3000 / Tape &
Reel
NUD3105
www.onsemi.com
2
Figure 1. Internal Circuit Diagrams
Drain (6)
1.0 k
300 k
Gate (2)
Source (1)
Drain (3)
1.0 k
300 k
Gate (5)
Source (4)
CASE 318F
Drain (3)
1.0 k
300 k
Gate (1)
Source (2)
CASE 318
MAXIMUM RATINGS (T
J
= 25°C unless otherwise specified)
Symbol Rating Value Unit
V
DSS
Drain to Source Voltage − Continuous 6.0 V
dc
V
GS
Gate to Source Voltage – Continuous 6.0 V
dc
I
D
Drain Current – Continuous 500 mA
E
z
Single Pulse Drain−to−Source Avalanche Energy (T
Jinitial
=
25°C) (Note 2)
50 mJ
E
zpk
Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5) 4.5 mJ
T
J
Junction Temperature 150 °C
T
A
Operating Ambient Temperature −40 to 85 °C
T
stg
Storage Temperature Range −65 to +150 °C
P
D
Total Power Dissipation (Note 1) SOT−23
Derating Above 25°C
225
1.8
mW
mW/°C
Total Power Dissipation (Note 1) SC−74
Derating Above 25°C
380
1.5
mW
mW/°C
R
q
JA
Thermal Resistance, Junction−to−Ambient SOT−23
SC−74
556
329
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD−883, Method 3015.
Machine Model Method 200 V.
2. Refer to the section covering Avalanche and Energy.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Symbol Characteristic Min Typ Max Unit
OFF CHARACTERISTICS
V
BRDSS
Drain to Source Sustaining Voltage (Internally Clamped), (I
D
= 10 mA)
6.0 8.0 9.0 V
B
VGSO
I
g
= 1.0 mA − − 8.0 V
I
DSS
Drain to Source Leakage Current
(V
DS
= 5.5 V , V
GS
= 0 V, T
J
= 25°C)
(V
DS
= 5.5 V, V
GS
= 0 V, T
J
= 85°C )
−
−
−
−
15
15
mA
I
GSS
Gate Body Leakage Current (318)
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V)
5.0
−
−
−
19
50
mA
Gate Body Leakage Current (318F)
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V)
5.0
−
−
−
35
65
mA
NUD3105
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Symbol UnitMaxTypMinCharacteristic
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
J
= 85°C)
0.8
0.8
1.2
−
1.4
1.4
V
R
DS(on)
Drain to Source On−Resistance
(I
D
= 250 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 5.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V, T
J
=85°C)
(I
D
= 500 mA, V
GS
= 5.0 V, T
J
=85°C)
−
−
−
−
−
−
−
−
−
−
1.2
1.3
0.9
1.3
0.9
W
I
DS(on)
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
J
= 85°C)
300
200
400
−
−
−
mA
g
FS
Forward Transconductance
(V
OUT
= 5.0 V, I
OUT
= 0.25 A)
350 570 − mmhos
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
(V
DS
= 5.0 V,V
GS
= 0 V, f = 10 kHz)
− 25 − pF
C
oss
Output Capacitance
(V
DS
= 5.0 V, V
GS
= 0 V, f = 10 kHz)
− 37 − pF
C
rss
Transfer Capacitance
(V
DS
= 5.0 V, V
GS
= 0 V, f = 10 kHz)
− 8.0 − pF
SWITCHING CHARACTERISTICS
Symbol
Characteristic Min Typ Max Units
t
PHL
t
PLH
t
PHL
t
PLH
Propagation Delay Times:
High to Low Propagation Delay; Figure 1 (5.0 V)
Low to High Propagation Delay; Figure 1 (5.0 V)
High to Low Propagation Delay; Figure 1 (3.0 V)
Low to High Propagation Delay; Figure 1 (3.0 V)
−
−
−
−
25
80
44
44
−
−
−
−
nS
t
f
tr
t
f
t
r
Transition Times:
Fall Time; Figure 1 (5.0 V)
Rise Time; Figure 1 (5.0 V)
Fall Time; Figure 1 (3.0 V)
Rise Time; Figure 1 (3.0 V)
−
−
−
−
23
32
53
30
−
−
−
−
nS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
P1-P3P4-P6P7-P9P10-P10

NUD3105LT1G

Mfr. #:
Buy NUD3105LT1G
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 8V Inductive Load
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet