NLAS5223BLMNR2G

NLAS5223B, NLAS5223BL
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4
NLAS5223BL DC CHARACTERISTICS − DIGITAL SECTION (Voltages Referenced to GND)
Symbo
l
Parameter Condition V
CC
Guaranteed Limit
Uni
t
25°C 40°C to +85°C
V
IH
Minimum High−Level Input Voltage, Select
Inputs
3.0
4.3
1.3
1.6
1.3
1.6
V
V
IL
Maximum Low−Level Input Voltage, Select
Inputs
3.0
4.3
0.5
0.6
0.5
0.6
V
I
IN
Maximum Input Leakage Current, Select
Inputs
V
IN
= 4.5 V or GND 4.3 ±0.1 ±1.0
A
I
OFF
Power Off Leakage Current V
IN
= 4.5 V or GND 0 ±0.5 ±2.0
A
I
CC
Maximum Quiescent Supply Current
(Note 6)
Select and V
IS
= V
CC
or GND 1.65 to 4.5 ±1.0 ±2.0
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
NLAS5223BL DC ELECTRICAL CHARACTERISTICS − ANALOG SECTION
Symbol Parameter Condition V
CC
Guaranteed Maximum Limit
Uni
t
25°C −40°C to +85°C
Min Max Min Max
R
ON
NC/NO On−Resistance
(Note 7)
V
IN
= V
IL
or V
IN
= V
IH
V
IS
= GND to V
CC
I
COM
= 100 mA
3.0
4.3
0.4
0.35
0.5
0.4
R
FLAT
NC/NO On−Resistance Flatness
(Notes 7 and 8)
I
COM
= 100 mA
V
IS
= 0 to V
CC
3.0
4.3
0.16
0.11
0.20
0.14
R
ON
On−Resistance Match Between Channels
(Notes 7 and 9)
V
IS
= 1.5 V;
I
COM
= 100 mA
V
IS
= 2.2 V;
I
COM
= 100 mA
3.0
4.3
0.05
0.05
0.05
0.05
I
NC(OFF)
I
NO(OFF)
NC or NO Off Leakage Current (Note 7) V
IN
= V
IL
or V
IH
V
NO
or V
NC
= 0.3 V
V
COM
= 4.0 V
4.3 −10 10 −100 100 nA
I
COM(ON)
COM ON
Leakage Current
(Note 7)
V
IN
= V
IL
or V
IH
V
NO
0.3 V or 4.0 V with
V
NC
floating or
V
NC
0.3 V or 4.0 V with
V
NO
floating
V
COM
= 0.3 V or 4.0 V
4.3 −10 10 −100 100 nA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
7. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
8. Flatness is defined as the difference between the maximum and minimum value of On−resistance as measured over the specified analog
signal ranges.
9. R
ON
=
R
ON(MAX)
− R
ON(MIN)
between NC1 and NC2 or between NO1 and NO2.
NLAS5223B, NLAS5223BL
www.onsemi.com
5
AC ELECTRICAL CHARACTERISTICS (Input t
r
= t
f
= 3.0 ns)
Symbo
l
Parameter Test Conditions
V
CC
(V)
V
IS
(V)
Guaranteed Maximum Limit
Uni
t
25°C −40°C to +85°C
Min Typ* Max Min Max
t
ON
Turn−On Time
R
L
= 50 , C
L
= 35 pF
(Figures 3 and 4)
2.3 − 4.5 1.5 50 60 ns
t
OFF
Turn−Off Time
R
L
= 50 , C
L
= 35 pF
(Figures 3 and 4)
2.3 − 4.5 1.5 30 40 ns
t
BBM
Minimum Break−Before−Make
Time
V
IS
= 3.0
R
L
= 50 , C
L
= 35 pF
(Figure 2)
3.0 1.5 2 15
ns
Typical @ 25, V
CC
= 3.6 V
C
IN
Control Pin Input Capacitance 3.5 pF
C
NO/NC
NO, NC Port Capacitance 60 pF
C
COM
COM Port Capacitance When Switch is Enabled 200 pF
*Typical Characteristics are at 25°C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbo
l
Parameter Condition
V
CC
(V)
25°C
Uni
t
Typical
BW Maximum On−Channel −3 dB
Bandwidth or Minimum
Frequency Response
V
IN
centered between V
CC
and GND
(Figure 5)
1.65 − 4.5 19 MHz
V
ONL
Maximum Feed−through On Loss
V
IN
= 0 dBm @ 100 kHz to 50 MHz
V
IN
centered between V
CC
and GND (Figure 5)
1.65 − 4.5 −0.06 dB
V
ISO
Off−Channel Isolation f = 100 kHz; V
IS
= 1 V RMS; C
L
= 5.0 pF
V
IN
centered between V
CC
and GND (Figure 5)
1.65 − 4.5 −68 dB
Q Charge Injection Select Input to
Common I/O
V
IN
=
V
CC
to
GND, R
IS
= 0 , C
L
= 1.0 nF
Q = C
L
x DV
OUT
(Figure 6)
1.65 − 4.5 38 pC
THD Total Harmonic Distortion
THD + Noise
F
IS
= 20 Hz to 20 kHz, R
L
= R
gen
= 600 , C
L
= 50 pF
V
IS
= 2.0 V RMS
3.0 0.08 %
VCT Channel−to−Channel Crosstalk
f = 100 kHz; V
IS
= 1.0 V RMS, C
L
= 5.0 pF, R
L
= 50
V
IN
centered between V
CC
and GND (Figure 5)
1.65 − 4.5 −70 dB
10.Off−Channel Isolation = 20log10 (V
COM
/V
NO
), V
COM
= output, V
NO
= input to off switch.
NLAS5223B, NLAS5223BL
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6
Figure 2. t
BBM
(Time Break−Before−Make)
Output
DUT
50
35 pF
V
IS
S
witch Select Pin
90%
Output
Input
V
CC
GND
90% of V
OH
GND
Figure 3. t
ON
/t
OFF
50% 50%
90% 90%
t
ON
t
OFF
V
OH
Output
Input
V
CC
0 V
Figure 4. t
ON
/t
OFF
DUT
Open
35 pF
V
CC
I
nput
50% 50%
10%
t
ON
t
OFF
Output
Input
V
CC
0 V
10
%
50
0.1 F
t
BMM
Output
V
OUT
V
OL
V
OUT
V
OH
V
OL
DUT
Open
V
IS
Input
Output
50
35 pF
V
OUT
0.1 F

NLAS5223BLMNR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Analog Switch ICs DUAL SPDT ULTRA-LOW RON S
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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