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BPW20RF

P1-P3P4-P5
BPW20RF
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 11-Aug-11
1
Document Number: 81570
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon Photodiode, RoHS Compliant
DESCRIPTION
BPW20RF is a planar Silicon PN photodiode in a
hermetically sealed short TO-5 case, especially designed for
high precision linear applications.
Due to its extremely high dark resistance, the short circuit
photocurrent is linear over seven decades of illumination
level.
On the other hand, there is a strictly logarithmic correlation
between open circuit voltage and illumination over the same
range.
Equipped with a clear, flat glass window, the spectral
responsitivity reaches from blue to near infrared.
FEATURES
• Package type: leaded
• Package form: TO-5
• Dimensions (in mm): Ø 8.13
• Radiant sensitive area (in mm
2
): 7.5
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Angle of half sensitivity: = ± 50°
• Hermetically sealed package
• Cathode connected to package
• Flat glass window
• UV enhanced
• Low dark current
• High shunt resistance
• High linearity
• Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
APPLICATIONS
• Sensor for light measuring techniques in cameras,
photometers, color analyzers, exposure meters (e.g.
solariums) and other medical and industrial measuring
and control applications.
Note
• Test condition see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
94 8482
PRODUCT SUMMARY
COMPONENT I
ra
(μA) (deg)
0.1
(nm)
BPW20RF 60 ± 50 400 to 1100
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW20RF Bulk MOQ: 500 pcs, 500 pcs/bulk TO-5
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
10 V
Power dissipation T
amb
50 °C P
V
300 mW
Junction temperature T
j
125 °C
Operating temperature range T
amb
- 40 to + 125 °C
Storage temperature range T
stg
- 40 to + 125 °C
Soldering temperature t 5 s T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm
2
R
thJA
250 K/W
BPW20RF
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 11-Aug-11
2
Document Number: 81570
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1.0 1.3 V
Breakdown voltage I
R
= 20 μA, E = 0 V
(BR)
10 V
Reverse dark current V
R
= 5 V, E = 0 I
ro
230nA
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0 C
D
1.2 nF
V
R
= 5 V, f = 1 MHz, E = 0 C
D
400 pF
Dark resistance V
R
= 10 mV R
D
38 G
Open circuit voltage E
A
= 1 klx V
o
330 500 mV
Temperature coefficient of V
o
E
A
= 1 klx TK
Vo
- 2 mV/K
Short circuit current E
A
= 1 klx I
k
20 60 μA
Temperature coefficient of I
k
E
A
= 1 klx TK
Ik
0.1 %/K
Reverse light current
E
A
= 1 klx, V
R
= 5 V I
ra
20 60 μA
E
e
= 1 mW/cm
2
, = 950 nm,
V
R
= 5 V
I
ra
42 μA
Angle of half sensitivity ± 50 deg
Wavelength of peak sensitivity
p
920 nm
Range of spectral bandwidth
0.1
400 1100 nm
Rise time V
R
= 0 V, R
L
= 1 k, = 820 nm t
r
3.4 μs
Fall time V
R
= 0 V, R
L
= 1 k, = 820 nm t
f
3.7 μs
40 60 80
120
10020
I - Reverse Dark Current (nA)
ro
94 8468
10
10
1
10
2
10
3
10
4
V
R
=5V
T
amb
- Ambient Temperature (°C)
0.8
0.9
1.0
1.1
1.3
1.2
I - Relative Reverse Light Current
ra rel
94 8469
V
R
=5V
λ = 950 nm
T
amb
- Ambient Temperature (°C)
40 60 80 120100200
BPW20RF
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 11-Aug-11
3
Document Number: 81570
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Short Circuit Current vs. Illuminance
Fig. 4 - Reverse Light Current vs. Irradiance
Fig. 5 - Reverse Light Current vs. Reverse Voltage
Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
I
k
- Short Circuit Current (µA)
E
A
- Illuminance (lx)
10
0
10
-2
10
-1
10
1
10
2
10
3
10
4
10
0
10
-1
10
-2
10
-3
10
-4
10
1
10
2
10
5
18959
10
3
0.1
1
10
100
0.01 0.1 1
I - Reverse Light Current (µA)
ra
E
e
- Irradiance (mW/cm
2
)
10
94 8471
V
R
=5V
λ = 950 nm
0.1 1 10
1
10
100
V
R
- Reverse Voltage (V)
100
94 8472
λ = 950 nm
2
1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
I - Reverse Light Current (µA)
ra
0
400
600
800
1200
1400
1000
200
0.1 101
C - Diode Capacitance (pF)
D
100
94 8473
E=0
f=1MHz
V
R
- Reverse Voltage (V)
94 8474
350 550 750 950
0
0.2
0.4
0.6
0.8
1.0
1150
λ - Wavelength (nm)
S (λ)
rel
- Relative Spectral Sensitivity
0.4 0.2 0
94 8475
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
S - Relative Sensitivity
rel
ϕ - Angular Displacement
P1-P3P4-P5

BPW20RF

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Optical Sensors Photodiodes 10V 300mW 920nm
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