IPB100N10S305ATMA1

IPB100N10S3-05
IPI100N10S3-05, IPP100N10S3-05
13 Typical avalanche energy 14 Typ. drain-source breakdown voltage
E
AS
= f(T
j
) V
BR(DSS)
= f(T
j
); I
D
= 1 mA
parameter: I
D
15 Typ. gate charge 16 Gate charge waveforms
V
GS
= f(Q
gate
); I
D
= 100 A pulsed
parameter: V
DD
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
90
95
100
105
110
115
-55 -15 25 65 105 145
T
j
[°C]
V
BR(DSS)
[V]
20 V
80 V
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140
Q
gate
[nC]
V
GS
[V]
100 A
50 A
25 A
0
500
1000
1500
2000
2500
3000
3500
25 75 125 175
T
j
[°C]
E
AS
[mJ]
Rev. 1.0 page 7 2008-02-11
IPB100N10S3-05
IPI100N10S3-05, IPP100N10S3-05
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaime
r
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of noninfringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
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If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0 page 8 2008-02-11
IPB100N10S3-05
IPI100N10S3-05, IPP100N10S3-05
Revision History
Version ChangesDate
Rev. 1.0 page 9 2008-02-11

IPB100N10S305ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_100+
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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