Product Standards
MOS FET
MTM861270LBF
Electrical Characteristics Ta = 25 C 3 C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Pulse test
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Page
S
Input Capacitance Ciss 300
VDS = -10 V, VGS = 0 V
f = 1 MHz
pF
Forward transfer admittance
*1
|Yfs|
A
m
RDS(on)3
ID = -0.5 A, VGS = -1.8 V 140 230
10
RDS(on)1
2of6
Parameter Symbol Conditions Min Typ Max Unit
Drain-source Breakdown Voltage VDSS ID = -1 mA, VGS = 0 V -20 V
-1 VDS = -20 V, VGS = 0 V
Gate-source Leakage Current IGSS
VGS =
8 V, VDS = 0 V
-0.4
Zero Gate Voltage Drain Current IDSS
ID = -1 A, VGS = -4 V
Drain-source On-state Resistance
*1
-0.75
RDS(on)2
ID = -1 A, VGS = -2.5 V
Gate-source Threshold Voltage Vth ID = -1 mA, VDS = -10 V -1.1
170
V
80 120
100
ID = -1 A, VDS = -10 V, f = 1 kHz
VDD = -10 V, VGS = 0 to -4 V
ID = -1 A
ns
VDD = -10 V, VGS = -4 to 0 V
ID = -1 A
3
Output Capacitance Coss 30
Reverse Transfer Capacitance Crss 35
Turn-on Delay Time
*2
td(on) 6
Rise Time
*2
tr 8
Turn-off Delay Time
*2
td(off) 57
55
Fall Time
*2
tf
