March 2008 Rev 2 1/15
15
STGB30NC60K
STGP30NC60K
30 A - 600 V - short circuit rugged IGBT
Features
Low on-voltage drop (V
CE(sat)
)
Low C
res
/ C
ies
ratio (no cross conduction
susceptibility)
Short circuit withstand time 10 µs
Applications
High frequency inverters
Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Figure 1. Internal schematic diagram
1
3
1
2
3
D²PAK
TO-220
Table 1. Device summary
Order codes Marking Package Packaging
STGB30NC60KT4 GB30NC60K D²PAK Tape and reel
STGP30NC60K GP30NC60K TO-220 Tube
www.st.com
Obsolete Product(s) - Obsolete Product(s)
Contents STGB30NC60K - STGP30NC60K
2/15
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Obsolete Product(s) - Obsolete Product(s)
STGB30NC60K - STGP30NC60K Electrical ratings
3/15
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
(1)
1. Calculated according to the iterative formula:
Collector current (continuous) at T
C
= 25°C 60 A
I
C
(1)
Collector current (continuous) at T
C
= 100°C 26 A
I
CL
(2)
2. V
clamp
= 80%,(V
CES
), T
j
=150°C, R
G
= 10 , V
GE
= 15 V
Turn-off latching current 125 A
I
CP
(3)
3. Pulse width limited by max. junction temperature allowed
Pulsed collector current 125 A
V
GE
Gate-emitter voltage ±20 V
P
TOT
Total dissipation at T
C
= 25°C 185 W
t
scw
Short circuit withstand time, V
CE
= 0.5V
(BR)CES
T
j
= 125°C, R
G
= 10 Ω, V
GE
= 12 V
10 µs
T
j
Operating junction temperature – 55 to 150 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max. 0.675 °C/W
R
thj-amb
Thermal resistance junction-ambient max. 62.5 °C/W
I
c
T
c
()
T
JMAX()
T
c
R
thj c
V
CE sat()MAX()
T
c
I,
c
()×
------------------------------------------------------------------------------------- -=
Obsolete Product(s) - Obsolete Product(s)

STGB30NC60KT4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT Transistors 31 A-600 V Rugged IGBT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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