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IRF840LCL

P1-P3P4-P6P7-P9P10-P10
Document Number: 91068
www.vishay.com
S11-1050-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V V
GS
Rating
• Reduced C
iss
, C
oss
, C
rss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
This new series of low charge Power MOSFETs achieve
significantly lower gate charge then conventional Power
MOSFETs. Utilizing the new LCDMOS (low charge device
Power MOSFETs) technology, the device improvements are
achieved without added product cost, allowing for reduced
gate drive requirements and total system savings. In
addition, reduced switching losses and improved efficiency
are achievable in a variety of high frequency applications.
Frequencies of a few MHz at high current are possible using
the new low charge Power MOSFETs.
These device improvements combined with the proven
ruggedness and reliability that characterize Power
MOSFETs offer the designer a new power transistor
standard for switching applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 14 mH, R
g
= 25 , I
AS
= 8.0 A (see fig. 12).
c. I
SD
8.0 A, dI/dt 100 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. Uses IRF840LC, SiHF840LC data and test conditions.
PRODUCT SUMMARY
V
DS
(V) 500
R
DS(on)
()V
GS
= 10 V 0.85
Q
g
(Max.) (nC) 39
Q
gs
(nC) 10
Q
gd
(nC) 19
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
I
2
PAK (TO-262)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHF840LCS-GE3 SiHF840LCL-GE3
Lead (Pb)-free
IRF840LCSPbF IRF840LCLPbF
SiHF840LCS-E3 SiHF840LCL-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
500
V
Gate-Source Voltage V
GS
± 30
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
8.0
A
T
C
= 100 °C 5.1
Pulsed Drain Current
a, e
I
DM
28
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
510 mJ
Avalanche Current
a
I
AR
8.0 A
Repetiitive Avalanche Energy
a
E
AR
13 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
125
W
T
A
= 25 °C 3.1
Peak Diode Recovery dV/dt
c, e
dV/dt 3.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91068
2 S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses SiHF840LC data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mounted, Steady-State)
a
R
thJA
-40
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-1.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 500 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA
c
-0.63-V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 4.8 A
b
- - 0.85
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 4.8 A
b
4.0 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
c
- 1100 -
pFOutput Capacitance C
oss
- 170 -
Reverse Transfer Capacitance C
rss
-18-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 8.0 A, V
DS
= 400 V,
see fig. 6 and 13
b, c
--39
nC Gate-Source Charge Q
gs
--10
Gate-Drain Charge Q
gd
--19
Turn-On Delay Time t
d(on)
V
DD
= 250 V, I
D
= 8.0 A,
R
g
= 9.1 , R
D
= 30 , see fig. 10
b, c
-12-
ns
Rise Time t
r
-25-
Turn-Off Delay Time t
d(off)
-27-
Fall Time t
f
-19-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--8.0
A
Pulsed Diode Forward Current
a
I
SM
--28
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 8.0 A, V
GS
= 0 V
b
--2.0V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 8.0 A, dI/dt = 100 A/μs
b, c
- 490 740 ns
Body Diode Reverse Recovery Charge Q
rr
-3.04.5μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
S
D
G
Document Number: 91068 www.vishay.com
S11-1050-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
91068_01
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
10
-1
10
-1
10
1
10
0
10
-1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
91068_02
4.5 V
10
-1
20 µs Pulse Width
V
DS
= 50 V
10
1
10
0
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5678910
4
25 °C
150 °C
91068_03
I
D
= 8.0 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91068_04
- 60 - 40 - 20 0 20 40 60 80
100
120 140 160
P1-P3P4-P6P7-P9P10-P10

IRF840LCL

Mfr. #:
Buy IRF840LCL
Manufacturer:
Vishay
Description:
MOSFET N-CH 500V 8A TO-262
Lifecycle:
New from this manufacturer.
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