Document Number: 38-05609 Rev. *H Page 4 of 17
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied .......................................... –55 C to +125 C
Supply voltage on
V
CC
to relative GND
[2]
.................................–0.3 V to +4.6 V
DC voltage applied to outputs
in high Z State
[2]
................................ –0.3 V to V
CC
+ 0.3 V
DC input voltage
[2]
............................. –0.3 V to V
CC
+ 0.3 V
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(per MIL-STD-883, method 3015) ...... ................... > 2001 V
Latch-up current .................................................... > 200 mA
Operating Range
Range Ambient Temperature V
CC
Industrial –40 C to +85 C 3.3 V 0.3 V
DC Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions
-10
Unit
Min Max
V
OH
Output HIGH voltage V
CC
= Min, I
OH
= –4.0 mA 2.4 – V
V
OL
Output LOW voltage V
CC
= Min, I
OL
= 8.0 mA – 0.4 V
V
IH
Input HIGH voltage 2.0 V
CC
+ 0.3 V
V
IL
Input LOW voltage
[3]
–0.3 0.8 V
I
IX
Input leakage current GND < V
I
< V
CC
–1 +1 A
I
OZ
Output leakage current GND < V
OUT
< V
CC
, Output Disabled –1 +1 A
I
CC
V
CC
operating supply current V
CC
= Max, f = f
MAX
= 1/t
RC
100 MHz – 90 mA
83 MHz – 80
66 MHz – 70
40 MHz – 60
I
SB1
Automatic CE Power-down
Current — TTL Inputs
Max V
CC
, CE > V
IH
,
V
IN
> V
IH
or V
IN
< V
IL
, f = f
MAX
–20mA
I
SB2
Automatic CE Power-down
Current — CMOS Inputs
Max V
CC
, CE > V
CC
– 0.3 V,
V
IN
> V
CC
– 0.3 V, or V
IN
< 0.3 V, f = 0
–10mA
Notes
2. Tested initially and after any design or process changes that may affect these parameters.
3. V
IL
(min) = –2.0 V and V
IH
(max) = V
CC
+ 2 V for pulse durations of less than 20 ns.
