CY7C1011DV33
Document Number: 38-05609 Rev. *H Page 13 of 17
Package Diagrams
Figure 11. 44-pin TSOP Z44-II Package Outline, 51-85087
Figure 12. 48-ball VFBGA (6 × 8 × 1 mm) BV48/BZ48 Package Outline, 51-85150
51-85087 *E
51-85150 *H
CY7C1011DV33
Document Number: 38-05609 Rev. *H Page 14 of 17
Acronyms Document Conventions
Units of Measure
Acronym Description
CMOS Complementary Metal Oxide Semiconductor
CE
Chip Enable
I/O Input/Output
OE
Output Enable
SRAM Static Random Access Memory
TSOP Thin Small Outline Package
TTL Transistor-Transistor Logic
VFBGA Very Fine-Pitch Ball Grid Array
WE
Write Enable
Symbol Unit of Measure
°C degree Celsius
MHz megahertz
µs microsecond
µA microampere
mA milliampere
ns nanosecond
% percent
pF picofarad
Vvolt
Wwatt
CY7C1011DV33
Document Number: 38-05609 Rev. *H Page 15 of 17
Document History
Document Title: CY7C1011DV33, 2-Mbit (128 K × 16) Static RAM
Document Number: 38-05609
Rev. ECN No. Issue Date
Orig. of
Change
Description of Change
** 250650 See ECN RKF New data sheet.
*A 399070 See ECN NXR Changed from Advance to Preliminary
Changed address of Cypress Semiconductor Corporation on Page# 1 from
“3901 North First Street” to “198 Champion Court”
Removed TQFP Package from product offering
Removed –15 speed bin
Corrected DC voltage limits in maximum ratings section from –0.5 to –0.3V and
V
CC
+0.5V to V
CC
+0.3V
Redefined I
CC
values for Com’l and Ind’l temperature ranges
I
CC
(Com’l):
Changed from 100, 80 and 70 mA to 90, 80 and 75 mA for 8, 10
and 12ns speed bins respectively
I
CC
(Ind’l): Changed from 80 and 70 mA to 90 and 85 mA for 10 and 12ns speed
bins respectively
Modified Note# 4 on AC Test Loads
Added Static Discharge Voltage and latch-up current spec
Added V
IH(max
) spec in Note# 2
Changed reference voltage level for measurement of Hi-Z parameters from
500 mV to 200 mV
Added Data Retention Characteristics Table and footnote on t
R
Added Write Cycle (WE Controlled, OE HIGH During Write) Timing Diagram
Changed package name for 44-pin TSOP II from Z to ZS
Added 8 ns parts in the Ordering Information table
Shaded Ordering Information Table
*B 459073 See ECN NXR Converted Preliminary to Final.
Removed –8 and –12 Speed bins
Removed Commercial Operating Range from product offering.
Changed the description of I
IX
from “Input Load Current” to “Input Leakage
Current”
Updated the Thermal Resistance table.
Changed t
HZBE
from 5 ns to 6 ns.
Updated footnote #7 on High-Z parameter measurement
Added footnote #12.
Updated the Ordering Information and replaced Package Name column with
Package Diagram in the Ordering Information table.
*C 480177 See ECN VKN Added -10BVI product ordering code in the Ordering Information table.
*D 3059162 10/14/2010 PRAS Added Ordering Code Definitions.
Updated Package Diagrams.
*E 3098812 12/01/2010 PRAS Added Acronyms and Units of Measure.
Minor edits and updated in new template.
*F 3861347 01/08/2013 TAVA Updated Ordering Information (Updated part numbers).
Updated Package Diagrams:
spec 51-85087 – Changed revision from *C to *E.
spec 51-85150 – Changed revision from *F to *H.
*G 4187715 11/10/2013 MEMJ Updated in new template.
Completing Sunset Review.

CY7C1011DV33-10BVXIT

Mfr. #:
Manufacturer:
Cypress Semiconductor
Description:
SRAM 2Mb 10ns3.3V 128Kx16 Fast Async SRAM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union