2003 Aug 20 3
NXP Semiconductors Product data sheet
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEV; PMEG3005AEV;
PMEG4005AEV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel.
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
(P
R
) are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and I
F(AV)
rating will be available on request.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT666 standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage
PMEG2005AEV − 20 V
PMEG3005AEV − 30 V
PMEG4005AEV − 40 V
I
F
continuous forward current note 1 − 0.5 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms; δ ≤ 0.5; note 2 − 3.5 A
I
FSM
non-repetitive peak forward current t
p
= 8 ms; square wave; note 2 − 10 A
T
j
junction temperature note 3 − 150 °C
T
amb
operating ambient temperature note 3 −65 +150 °C
T
stg
storage temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2 405 K/W
in free air; notes 2 and 3 215 K/W
R
th j-s
thermal resistance from junction to
soldering point
note 4 80 K/W
