CREAT BY ART
- Glass passivated chip junction
- High efficiency, Low VF
- High surge current capability
- High current capability
- High reliability
- High surge current capability
- UL Recognized File # E-326243
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
50 100 200 300 400 600 800 1000 V
V
RMS
35 70 140 210 280 420 560 700 V
V
DC
50 100 200 300 400 600 800 1000 V
I
F(AV)
A
I
2
t A
2
s
t
rr
ns
C
J
pF
R
θJC
°C/W
T
J
°C
T
STG
°C
Version: J1512
- 55 to +150
Rating for fusing (t<8.3ms) 93
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
60
2
- 55 to +150
I
R
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC.
ITO-220AC
HERAF
807G
HERAF
808G
1.7
10
Typical junction capacitance (Note 3) 80
Typical thermal resistance
Operating junction temperature range
μA
Maximum reverse recovery time (Note 2) 50
400
80
Maximum instantaneous forward voltage (Note 1)
I
F
= 8 A
V
F
1.0 1.3 V
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
A
8
150
HERAF
805G
HERAF
806G
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
PARAMETER SYMBOL
HERAF
801G
HERAF
804G
MECHANICAL DATA
Case: ITO-220AC
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.7 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
HERAF801G - HERAF808G
Taiwan Semiconductor
8A, 50V - 1000V Isolated Glass Passivated Hi
h Efficient Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
Maximum reverse current @ rated V
R
T
J
=25°C
T
J
=125°C
HERAF
802G
HERAF
803G
1
2
