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U30DCT-E3/4W

P1-P3P4-P5
U30xCT-E3, UB30xCT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 30-Oct-13
1
Document Number: 89015
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode Ultrafast Plastic Rectifier
FEATURES
• Power pack
• Oxide planar chip junction
• Ultrafast recovery time
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s per JESD
22-B106 (for TO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
power supplies, freewheeling diodes, DC/DC converters or
polarity protection specifically for CCM application.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Molding compound meets UL 94V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 15 A
V
RRM
100 V to 200 V
I
FSM
160 A
trr 17 ns
V
F
at I
F
= 15 A 0.892 V
T
J
max. 150 °C
Package TO-220AB, TO-263AB
Diode variations Dual Common Cathode
TO-220AB
1
2
3
1
2
K
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
U30xCT
UB30xCT
K
PIN 1
PIN 2 HEATSINK
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U(B)30BCT U(B)30CCT U(B)30DCT UNIT
Max. repetitive peak reverse voltage V
RRM
100 150 200 V
Max. average forward rectified current (fig. 1)
total device
I
F(AV)
30
A
per diode 15
Peak forward surge current single half sine-wave
superimposed on rated load per diode
8.3 ms
I
FSM
160
A
10 ms 150
Electrostatic discharge capacitor voltage,
human body model: C = 150 pF, R = 1.5 k: (contact mode)
V
C
8kV
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
U30xCT-E3, UB30xCT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 30-Oct-13
2
Document Number: 89015
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width d 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Max. Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
(1)
I
F
= 7.5 A
T
J
= 25 °C
V
F
0.875 -
V
I
F
= 15 A 0.964 1.05
I
F
= 7.5 A
T
J
= 100 °C
0.800 -
I
F
= 15 A 0.892 0.95
Reverse current per diode
(2)
rated V
R
T
J
= 25 °C
I
R
1.3 20
μA
T
J
= 100 °C 200 600
Reverse recovery time per diode I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
17 25 ns
Reverse recovery time per diode
I
F
= 15 A, dI/dt = 200 A/μs,
V
R
= 200 V, I
rr
= 0.1 I
RM
t
rr
36 45 ns
Stored charge per diode Q
rr
110 - nC
Forward recovery time per diode
I
F
= 15 A, dI/dt = 120 A/μs,
V
F
= 1.1 x V
F
max.
t
fr
175 - ns
Peak forward voltage per diode V
FP
3.1 - V
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL U30xCT UB30xCT UNIT
Typical thermal resistance per diode R
TJC
2.4 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB U30DCT-E3/4W 1.87 4W 50/tube Tube
TO-263AB UB30DCT-E3/4W 1.37 4W 50/tube Tube
TO-263AB UB30DCT-E3/8W 1.37 8W 800/reel Tape and reel
20
15
25
30
35
10
5
0
0 25 50 75 100 125 150
Average Forward Current (A)
Case Temperature (°C)
U30xCT
UB30xCT
Resistive or Inductive Load
12
14
16
18
10
8
6
4
2
0
0 2 4 6 8 1012141618
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = 0.2
D = t
p
/T t
p
T
U30xCT-E3, UB30xCT-E3
www.vishay.com
Vishay General Semiconductor
Revision: 30-Oct-13
3
Document Number: 89015
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
100
10
1
0.1
0.01
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 50 °C
T
J
= 75 °C
T
J
= 100 °C
T
J
= 125 °C
1000
100
10
10 20 30 40 50 60 70 80 90 100
1
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
T
J
= 50 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
100
10
0.1 1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
0.1
1
0.10.010.001 1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

U30DCT-E3/4W

Mfr. #:
Buy U30DCT-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 200 Volt 30 Amp 25ns Dual Common Cathode
Lifecycle:
New from this manufacturer.
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