MB2M-E3/45

MB2M, MB4M, MB6M
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
1
Document Number: 88660
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Miniature Glass Passivated Single-Phase Bridge Rectifiers
FEATURES
UL recognition, file number E54214
Ideal for printed circuit boards
Applicable for automative insertion
High surge current capability
Solder dip 275 °C max. 10 s, per JESD 22-B106
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case: MBM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked on body
Notes
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2)
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
PRIMARY CHARACTERISTICS
Package MBM
I
F(AV)
0.5 A
V
RRM
200 V, 400 V, 600 V
I
FSM
35 A
I
R
5 μA
V
F
at I
F
= 0.4 A 1.0 V
T
J
max. 150 °C
Diode variations Quad
~
~
Case Style MBM
~
~
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2M MB4M MB6M UNIT
Device marking code 2 4 6
Maximum repetitive peak reverse voltage V
RRM
200 400 600 V
Maximum RMS voltage V
RMS
140 280 420 V
Maximum DC blocking voltage V
DC
200 400 600 V
Maximum average forward output
rectified current (fig. 1)
on glass-epoxy PCB
(1)
I
F(AV)
0.5
A
on aluminum substrate
(2)
0.8
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
35 A
Rating for fusing (t < 8.3 ms) I
2
t5.0A
2
s
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 150 °C
MB2M, MB4M, MB6M
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
2
Document Number: 88660
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
(2)
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Derating Curve for Output Rectified Current Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MB2M MB4M MB6M UNIT
Maximum instantaneous forward
voltage per diode
I
F
= 0.4 A V
F
1.0 V
Maximum DC reverse current at rated DC blocking
voltage per diode
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 100
Typical junction capacitance per diode 4.0 V, 1 MHz C
J
13 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MB2M MB4M MB6M UNIT
Typical thermal resistance
R
JA
(1)
85
°C/W R
JA
(2)
70
R
JL
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
MB2M-E3/45 0.22 45 100 Tube
0
20
40
60
80
100
120
140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Aluminum Substrate
Glass
Epoxy
PCB
Resistive or Inductive Load
Average Forward Rectified Current (A)
Ambient Temperature (°C)
1
10
100
0
5
10
15
20
25
30
35
f = 60 Hzf = 50 Hz
T
A
= 40 °C
Single Half Sine-Wave
Number of Cycles
Peak Forward Surge Current (A)
1.0 Cycle
MB2M, MB4M, MB6M
www.vishay.com
Vishay General Semiconductor
Revision: 16-Aug-13
3
Document Number: 88660
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.01
0.1
1
10
T
J
= 150 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
Pulse Width = 300 µs
1 % Duty Cycle
1.5
0.3
0.5
0.7
0.9
1.1
1.3
0
20
40
60
80
100
0.01
0.1
1
10
100
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
0.1
1
10
100
0
5
10
15
20
25
30
1000
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.106 (2.70)
0.090 (2.30)
0.147 (3.73)
0.137 (3.48)
0.161 (4.10)
0.144 (3.65)
0.190 (4.83)
0.179 (4.55)
0.029 (0.74)
0.017 (0.43)
0.105 (2.67)
0.095 (2.41)
0.205 (5.21)
0.195 (4.95)
10° to 15°
0.028 (0.71)
0.020 (0.51)
0.016 (0.41)
0.006 (0.15)
0.148 (3.75)
0.132 (3.35)
0.049 (1.24)
0.039 (0.99)
Case Style MBM

MB2M-E3/45

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Bridge Rectifiers 200 Volt 0.5 Amp 35 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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