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STTH3010GY-TR

P1-P3P4-P6P7-P9
This is information on a product in full production.
June 2012 Doc ID 018923 Rev 1 1/9
9
STTH3010-Y
Automotive ultrafast recovery - high voltage diode
Datasheet − production data
Features
■ AEC-Q101 qualified
■ Ultrafast soft recovery
■ Very low conduction and switching losses
■ High frequency and/or high pulsed current
operation
■ High reverse voltage capability
■ High junction temperature
■ ECOPACK
®
2 compliant component
(STTH3010WY)
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability like automotive applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Table 1. Device summary
I
F(AV)
30 A
V
RRM
1000 V
T
j
175 °C
V
F
(typ) 1.30 V
t
rr
(typ) 42 ns
K
K
K
A
A
A
NC
D
2
PAK
STTH3010GY
DO-247
STTH3010WY
www.st.com
Characteristics STTH3010-Y
2/9 Doc ID 018923 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 1.3 x I
F(AV)
+ 0.013 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 1000 V
I
F(RMS)
Forward rms current 50 A
I
F(AV)
Average forward current, δ = 0.5
DO-247 T
c
= 105 °C
30 A
D
2
PAK T
c
= 105 °C
I
FRM
Repetitive peak forward current t
p
= 5 µs, F = 5 kHz square 300 A
I
FSM
Surge non repetitive forward current t
p
= 10 ms Sinusoidal 180 A
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature range -40 to +175 °C
Table 3. Thermal parameters
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
DO-247
1.1 °C/W
D
2
PAK
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
15
µA
T
j
= 125 °C 10 100
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 30 A
2
VT
j
= 100 °C 1.4 1.8
T
j
= 150 °C 1.3 1.7
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
STTH3010-Y Characteristics
Doc ID 018923 Rev 1 3/9
Table 5. Dynamic characteristics
Symbol Parameter
Test conditions
Min. Typ Max. Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
100
ns
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
53 70
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 30 V, T
j
= 25 °C
42 55
I
RM
Reverse recovery current
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
24 32 A
S Softness factor
I
F
= 30 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
1
t
fr
Forward recovery time
I
F
= 30 A dI
F
/dt = 100 A/µs
V
FR
= 1.5 x V
Fmax
, T
j
= 25 °C
450 ns
V
FP
Forward recovery voltage
I
F
= 30 A, dI
F
/dt = 100 A/µs,
T
j
= 25 °C
5V
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
P(W)
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0 5 10 15 20 25 30 35 40
=0.05
=0.1
=0.2
=0.5
=1
T
I (A)
F(AV)
I (A)
FM
0
20
40
60
80
100
120
140
160
180
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
j
=25°C
(Maximum values)
T
j
=150°C
(Maximum values)
T
j
=150°C
(Typical values)
V (V)
FM
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dI
F
/dt (typical values)
Z/R
th(j-c) th(j-c)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
Single pulse
t (s)
p
I (A)
RM
0
10
20
30
40
50
60
0 50 100 150 200 250 300 350 400 450 500
V
R
=600V
T
j
=125°C
I
F
= 2 x I
F(AV)
I
F
= I
F(AV)
I
F
=0.5 x I
F(AV)
dI /dt(A/µs)
F
P1-P3P4-P6P7-P9

STTH3010GY-TR

Mfr. #:
Buy STTH3010GY-TR
Manufacturer:
STMicroelectronics
Description:
Diodes - General Purpose, Power, Switching Ultrafast Recovery 30A 1000V 1.30VF
Lifecycle:
New from this manufacturer.
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