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ZXMN10B08E6TC

P1-P3P4-P6P7-P7
ZXMN10B08E6
Datasheet Number: DS33570 Rev. 3 – 2
1 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10
B
08E6
NEW PR O D U C T
YM
10B8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
Max R
DS(on)
Max I
D
T
A
= +25°
°°
°C
(Note 6)
100V
230mΩ @ V
GS
= 10V
1.9A
300mΩ @ V
GS
= 4.5V
1.68A
Description and Applications
This MOSFET utilizes a unique structure that combines
of low on-resistance with fast switching speed. This makes it
ideal for
high-efficiency, low voltage, power management applications.
• DC - DC Converters
• Power Management Functions
• Disconnect Switches
• Motor Control
Features and Benefits
• Low On-Resistance
• Fast Switching Speed
• Low Threshold
• Low Gate Drive
• SOT26 Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (Approximate)
Ordering Information
(Note 4)
Part Number
Reel Size
(inch)
Tape Width
(mm)
Quantity Per Reel
ZXMN10B08E6TA 7 8 3,000
ZXMN10B08E6TC 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
SOT26
Date Code Key
Year
2015
2016
2017
20
18
201
9
20
20
20
21
20
22
Code
C D E F G H I J
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1 2 3 4 5 6 7 8 9 O N D
Top View
Pinout Top-view Device Symbol
SOT
26
10B8 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
ZXMN10B08E6
Datasheet Number: DS33570 Rev. 3 – 2
2 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10
B
08E6
NEW PR O D U C T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
100 V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current
V
GS
= 10V
(Note 6)
I
D
1.9
A
T
A
= +70°C (Note 6)
1.5
(Note 5) 1.6
Pulsed Drain Current (Note 7)
I
DM
9 A
Continuous Source Current (Body Diode) (Note 6)
I
S
2.5 A
Pulsed Source Current (Body Diode) (Note 7)
I
SM
9 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 5)
P
D
1.1
W
mW/°C
8.8
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
1.7
W
mW/°C
13.6
Thermal Resistance, Junction to Ambient
(Note 5)
R
θ
JA
113
°C/W
(Note 6) 73
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
Thermal Characteristics
ZXMN10B08E6
Datasheet Number: DS33570 Rev. 3 – 2
3 of 7
www.diodes.com
March 2015
© Diodes Incorporated
ZXMN10
B
08E6
NEW PR O D U C T
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100
V
I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
0.5 µA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100 nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
3.0 V
I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS(ON)
0.23
Ω
V
GS
= 10V, I
D
= 1.6A
0.30
V
GS
= 4.5V, I
D
= 1.4A
0.50
V
GS
= 4.3V, I
D
= 1.1A
Forward Transconductance (Notes 8 & 10)
g
fs
4.8
S
V
DS
= 15V, I
D
= 1.6A
Diode Forward Voltage (Note 8)
V
SD
0.85 0.95 V
T
J
= +25°C, I
S
= 2.0A, V
GS
= 0V
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
497
pF
V
DS
= 50V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
29
pF
Reverse Transfer Capacitance
C
rss
18
pF
Gate Charge (Note 9)
Q
g
5.0
nC
V
DS
= 50V , V
GS
= 5V, I
D
= 1.6A
Total Gate Charge (Note 9)
Q
g
9.2
nC
V
DS
= 50V, V
GS
= 10V,
I
D
= 1.6A
Gate-Source Charge (Note 9)
Q
gs
1.7
nC
Gate-Drain Charge (Note 9)
Q
gd
2.5
nC
Turn-On Delay Time (Note 9)
t
d(on)
2.9
ns
V
DD
= 50V, I
D
= 1.0A,
R
G
≅ 6.0Ω, V
GS
= 10V
Turn-On Rise Time (Note 9)
t
r
2.1
ns
Turn-Off Delay Time (Note 9)
t
d(off)
12.1
ns
Turn-Off Fall Time (Note 9)
t
f
5.0
ns
Reverse Recovery Time
t
rr
32
ns
T
J
= +25°C, I
F
= 1.7A,
di/dt = 100A/µs
Reverse Recovery Charge
Q
rr
40
nC
Notes: 8. Measured under pulsed conditions. Width ≤ 300µs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
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ZXMN10B08E6TC

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MOSFET N-CH 100V 1.6A SOT23-6
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