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ESH1PD-E3/85A

P1-P3P4-P5
ESH1PB, ESH1PC, ESH1PD
www.vishay.com
Vishay General Semiconductor
Revision: 16-Oct-15
1
Document Number: 88895
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount Ultrafast Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power loss
• Low thermal resistance
• Meets MSL level 1 per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of AC/AC and DC/DC converters
in high temperature conditions for both consumer and
automotive applications.
MECHANICAL DATA
Case: DO-220AA (SMP)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
100 V, 150 V, 200 V
t
rr
25 ns
V
F
0.90 V
T
J
max. 175 °C
Package DO-220AA (SMP)
Diode variations Single die
DO-220AA (SMP)
eSMP
®
Series
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH1PB ESH1PC ESH1PD UNIT
Device marking code PB PC PD
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 10 ms single
half sine-wave superimposed on rated load
I
FSM
50 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
ESH1PB, ESH1PC, ESH1PD
www.vishay.com
Vishay General Semiconductor
Revision: 16-Oct-15
2
Document Number: 88895
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Thermal resistance from junction to ambient on free air
(2)
Mounted on 6 mm x 6 mm pad size from junction to mount
Note
(1)
Automotive grade
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage
I
F
= 0.7 A
T
J
= 25 °C V
F
(1)
0.86
V
I
F
= 1 A 0.90
Maximum reverse current at rated V
R
voltage
T
J
= 25 °C
I
R
(2)
1.0
μA
T
J
= 125 °C 25
Maximum reverse current V
R
= 20 V T
J
= 150 °C I
R
50 μA
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A t
rr
25 ns
Typical reverse recovery time
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
25
ns
T
J
= 100 °C 35
Typical stored charge
I
F
= 1.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
10
nC
T
J
= 100 °C 15
Typical junction capacitance 4.0 V, 1 MHz C
J
25 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ESH1PB ESH1PC ESH1PD UNIT
Typical thermal resistance
R
JA
(1)
105
°C/W
R
JM
(2)
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ESH1PB-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel
ESH1PB-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel
ESH1PBHM3/84A
(1)
0.024 84A 3000 7" diameter plastic tape and reel
ESH1PBHM3/85A
(1)
0.024 85A 10 000 13" diameter plastic tape and reel
ESH1PB, ESH1PC, ESH1PD
www.vishay.com
Vishay General Semiconductor
Revision: 16-Oct-15
3
Document Number: 88895
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1.2
95 105 115 125 135 145 155 165
0.8
1.0
0.2
0.4
0.6
175
T
L
Measured
at the Cathode Band Terminal
Lead Temperature (°C)
Average Forward Rectified Current (A)
1
10
100
10
20
30
0
40
50
Number of Cycles at 50 Hz
Peak Forward Surge Current (A)
0.4 0.6 0.8 1.2 1.4
0.1
10
1
100
0.01
1.00.2 1.6
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
20 40 60 80 100
0.1
1
10
100
10 30 50 70 90
0.01
1000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
0.1 101 100
1
100
10
1000
Reverse Voltage (V)
Junction Capacitance (pF)
0.01 101 100
1
10
100
0.1
1000
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

ESH1PD-E3/85A

Mfr. #:
Buy ESH1PD-E3/85A
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 625-ESH1PD-M3/85A
Lifecycle:
New from this manufacturer.
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