0 40 80 120 160
0
80
160
240
320
0.01 0.10 1.00 10.00
0.1
1.0
10.0
100.0
0.01 0.1 1
3000
4000
5000
6000
0.0 0.5 1.0 1.5
0
100
200
300
1 10 100 1000 10000
0.00
0.04
0.08
0.12
0.16
I
T
]
t [s]
V
T
[V]
2 3 4 5 6 7 8 9 011
10
4
10
5
I
2
t
[A
2
s]
t [ms]
I
TSM
[A]
T
VJ
= 25°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
V
R
= 0 V
I
TAVM
[A]
T
case
[°C]
Z
thJC
[K/W]
t [ms]
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
Fig. 3 I
2
t vs. time per thyristor
Fig. 4 Gate voltage & gate current
Fig. 6 Max. forward current vs.
case temperature per thyr.
Fig. 8 Transient thermal impedance junction to case
vs. time per thyristor
t
gd
[μs]
I
G
[A]
lim.
typ.
Fig. 5 Gate controlled delay time t
gd
0 80 160 240 320
0
70
140
210
280
350
420
I
T(AV)
[A]
P
tot
W]
Fig. 7 Power dissipation vs. forward current
0 70 140
T
amb
[°C]
T
VJ
= 125°C
dc =
1
0.5
0.4
0.33
0.17
0.08
dc =
1
0.5
0.4
0.33
0.17
0.08
I
G
[A]
R
thHA
0.2
0.4
0.6
0.8
1.0
2.0
T
VJ
= 140°C
T
VJ
= 140°C
T
VJ
= 125°C
140°C
i R
thi
(K/W) t
i
(s)
1 0.0100 0.00014
2 0.0065 0.01900
3 0.0250 0.18000
4 0.0615 0.52000
5 0.0270 1.60000
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
V
G
[V]
1: I
GT
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
1
2
3
4
5
6
I
GD
, T
VJ
= 140°C
Thyristor
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20160408cData according to IEC 60747and per semiconductor unless otherwise specified
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