1N6283A

1N6267A Series
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4
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A
= 25 C°
T
A
, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
5
4
3
2
1
25 50 75 100 125 150 175 200
P
D
, STEADY STATE POWER DISSIPATION (WATTS)
T
L
, LEAD TEMPERATURE (°C)
3/8
3/8
0
0
100
50
0
01 2 3 4
t, TIME (ms)
, VALUE (%)
t
r
t
P
PEAK VALUE − I
PP
HALF VALUE −
I
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
tr 10s
1s 10s 100s 1 ms 10 ms
100
10
1
t
P
, PULSE WIDTH
P
PK
, PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
0.1s
I
PP
Figure 3. Capacitance versus Breakdown Voltage
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
1 10 100 1000
10,000
1000
100
10
C, CAPACITANCE (pF)
MEASURED @ V
RWM
MEASURED @
ZERO BIAS
Figure 4. Steady State Power Derating Figure 5. Pulse Waveform
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
1 10 100 1000
10,000
1000
100
10
C, CAPACITANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @ V
RWM
1N6267A Series
http://onsemi.com
5
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE6.8CA
through
1.5KE200CA
Figure 6. Dynamic Impedance
1000
500
200
100
50
20
10
5
2
1
1000
500
200
100
50
20
10
5
2
1
0.3 0.5 0.7 1 2 3 5 7 10 20 30
V
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
0.3 0.5 0.7 1 2 3 5 7 10 20 30
V
BR
, INSTANTANEOUS INCREASE IN V
BR
ABOVE V
BR(NOM)
(VOLTS)
I
T
, TEST CURRENT (AMPS)
V
BR(NOM)
=6.8 to 13V
T
L
=25°C
t
P
=10s
V
BR(NOM)
=6.8 to 13V
20V
24V
43V
75V
180V
120V
20V
24V
43V
Figure 7. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 s
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 s
0.1 0.2 0.5 2 5 10 501 20 100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
T
L
=25°C
t
P
=10s
I
T
, TEST CURRENT (AMPS)
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
1N6267A Series
http://onsemi.com
6
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
V
in
V
L
V
V
in
V
in
(TRANSIENT)
V
L
t
d
V
V
L
V
in
(TRANSIENT)
Z
in
LOAD
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 8. Figure 9.
UL RECOGNITION*
The entire series has Underwriters Laboratory
Recognition for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning, Temperature test, Dielectric Voltage-
Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
*Applies to 1.5KE6.8A, CA thru 1.5KE250A, CA
CLIPPER BIDIRECTIONAL DEVICES
1. Clipper-bidirectional devices are available in the
1.5KEXXA series and are designated with a “CA”
suffix; for example, 1.5KE18CA. Contact your nearest
ON Semiconductor representative.
2. Clipper-bidirectional part numbers are tested in both
directions to electrical parameters in preceding table
(except for V
F
which does not apply).
3. The 1N6267A through 1N6303A series are JEDEC
registered devices and the registration does not include
a “CA” suffix. To order clipper-bidirectional devices
one must add CA to the 1.5KE device title.

1N6283A

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS DIODE 28.2V 45.7V AXIAL
Lifecycle:
New from this manufacturer.
Delivery:
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