Characteristics TYN640, TYN840
2/8 DocID6944 Rev 6
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180° conduction angle) T
c
= 95 °C 40 A
IT
(AV)
Average on-state current (180° conduction angle) T
c
= 95 °C 25 A
I
TSM
Non repetitive surge peak on-state
current
t
p
= 8.3 ms
T
j
= 25 °C
480
A
t
p
= 10 ms 460
I
²
tI
²
t Value for fusing t
p
= 10 ms T
j
= 25 °C 1060 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
100 ns
F = 60 Hz
T
j
= 125
°C
50 A/µs
I
GM
Peak gate current t
p
= 20 µs
T
j
= 125
°C
4A
P
G(AV)
Average gate power dissipation
T
j
= 125
°C
1W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage 5 V
Table 3. Electrical Characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test Conditions Value Unit
I
GT
V
D
= 12 V R
L
= 33 Ω
MIN. 3.5
mA
MAX. 35
V
GT
MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C MIN. 0.2 V
I
H
I
T
= 500 mA Gate open MAX. 75 mA
I
L
I
G
= 1.2 x I
GT
MAX. 150 mA
dV/dt V
D
= 67% V
DRM
Gate open T
j
= 125 °C MIN. 1000 V/µs
V
TM
I
TM
= 80 A t
p
= 380 µs T
j
= 25 °C MAX. 1.6 V
V
t0
Threshold voltage T
j
= 125 °C MAX. 0.85 V
R
d
Dynamic resistance T
j
= 125 °C MAX. 10 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
MAX.
5µA
T
j
= 125 °C 4 mA
Table 4. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC) 0.8 °C/W
R
th(j-a)
Junction to ambient (DC) 60 °C/W
