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SIZ980DT-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P14
SiZ980DT
www.vishay.com
Vishay Siliconix
S16-2419-Rev. C, 28-Nov-16
1
Document Number: 62976
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode
Ordering Information:
SiZ980DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET
®
Gen IV power MOSFET
•SkyFET
®
low-side MOSFET with integrated
Schottky
• 100 % R
g
and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• CPU core power
• Computer / server peripherals
•POL
• Synchronous buck converter
• Telecom DC/DC
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 68 °C/W for channel-1 and 57 °C/W for channel-2.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() (MAX.) I
D
(A) Q
g
(TYP.)
Channel-1 30
0.0067 at V
GS
= 10 V 20
a
5.4 nC
0.0100 at V
GS
= 4.5 V 20
a
Channel-2 30
0.0016 at V
GS
= 10 V 60
a
21 nC
0.0022 at V
GS
= 4.5 V 60
a
PowerPAIR
®
6 x 5
Top View
1
6 mm
1
6 mm
5 mm
Bottom View
1
G
1
2
D
1
4
D
1
3
D
1
S
1
/D
2
(Pin 9)
D
1
S
2
5
S
2
6
G
2
8
S
2
7
D
1
S
2
N-Channel 2
MOSFET
N-Channel 1
MOSFET
G
1
S
1
/D
2
G
2
Schottky
Diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT
Drain-Source Voltage V
DS
30
V
Gate-Source Voltage V
GS
+20, -16
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
20
a
60
a
A
T
C
= 70 °C 20
a
60
a
T
A
= 25 °C 18.8
b, c
43
b, c
T
A
= 70 °C 14.6
b, c
34
b, c
Pulsed Drain Current (t = 100 μs) I
DM
90 130
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
20
a
55
a
T
A
= 25 °C 3.2
b, c
4.1
b, c
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
15 25
Single Pulse Avalanche Energy E
AS
11.2 31 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
20 66
W
T
C
= 70 °C 12.9 42
T
A
= 25 °C 3.8
b, c
5
b, c
T
A
= 70 °C 2.4
b, c
3.2
b, c
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL
CHANNEL-1 CHANNEL-2
UNIT
TYP. MAX. TYP. MAX.
Maximum Junction-to-Ambient
b, f
t 10 s R
thJA
26 33 20 25
°C/W
Maximum Junction-to-Case (Drain) Steady State R
thJC
4.7 6.2 1.5 1.9
SiZ980DT
www.vishay.com
Vishay Siliconix
S16-2419-Rev. C, 28-Nov-16
2
Document Number: 62976
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA
Ch-1 30 - -
V
Ch-2 30 - -
Drain-Source Breakdown Voltage
c
(transient)
V
DSt
V
GS
= 0 V, t
transient
1 μs
Ch-1 36 - -
Ch-2 36 - -
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA
Ch-1 1.2 - 2.2
Ch-2 1.1 - 2.2
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= +20 V, -16 V
Ch-1 - - ± 100
nA
Ch-2 - - ± 100
Zero Gate Voltage Drain Current I
DSS
V
DS
= 30 V, V
GS
= 0 V
Ch-1 - - 1
μA
Ch-2 - 20 100
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
Ch-1 - - 5
Ch-2 - 100 1000
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 10 V
Ch-1 20 - -
A
Ch-2 20 - -
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 15 A Ch-1 - 0.0047 0.0067
V
GS
= 10 V, I
D
= 19 A Ch-2 - 0.0011 0.0016
V
GS
= 4.5 V, I
D
= 12 A Ch-1 - 0.0065 0.0100
V
GS
= 4.5 V, I
D
= 15 A Ch-2 - 0.0016 0.0022
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 15 A Ch-1 - 80 -
S
V
DS
= 10 V, I
D
= 19 A Ch-2 155 -
Dynamic
a
Input Capacitance C
iss
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-1 - 930 -
pF
Ch-2 - 4600 -
Output Capacitance C
oss
Ch-1 - 325 -
Ch-2 - 1700 -
Reverse Transfer Capacitance C
rss
Ch-1 - 21 -
Ch-2 - 115 -
C
rss
/C
iss
Ratio
Ch-1 - 0.023 0.046
Ch-2 0.025 0.050
Total Gate Charge Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 19 A
Ch-1 - 12 18
nC
Ch-2 - 51 77
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 19 A
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 19 A
Ch-1 5.4 8.1
Ch-2 - 23 35
Gate-Source Charge Q
gs
Ch-1 - 3 -
Ch-2 - 12.2 -
Gate-Drain Charge Q
gd
Ch-1 - 0.75 -
Ch-2 - 2.2 -
Output Charge Q
oss
V
DS
= 15 V, V
GS
= 0 V
Ch-1 - 10 -
Ch-2 - 54 -
Gate Resistance R
g
f = 1 MHz
Ch-1 0.3 1.5 3
Ch-2 0.2 1 2
SiZ980DT
www.vishay.com
Vishay Siliconix
S16-2419-Rev. C, 28-Nov-16
3
Document Number: 62976
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. Derived from UIS characterization data at time of product release. Production data log is not available.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Dynamic
a
Turn-On Delay Time t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-1 - 15 30
ns
Ch-2 - 35 70
Rise Time t
r
Ch-1 - 65 130
Ch-2 - 75 150
Turn-Off Delay Time t
d(off)
Ch-1 - 10 20
Ch-2 - 30 60
Fall Time t
f
Ch-1 - 10 20
Ch-2 - 10 20
Turn-On Delay Time t
d(on)
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-1 - 10 20
Ch-2 - 15 30
Rise Time t
r
Ch-1 - 25 50
Ch-2 - 21 40
Turn-Off Delay Time t
d(off)
Ch-1 - 15 30
Ch-2 - 32 60
Fall Time t
f
Ch-1 - 10 20
Ch-2 - 10 20
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
I
S
T
C
= 25 °C
Ch-1 - - 20
A
Ch-2 - - 60
Pulse Diode Forward Current
a
I
SM
Ch-1 - - 90
Ch-2 - - 130
Body Diode Voltage V
SD
I
S
= 10 A, V
GS
= 0 V
Ch-1 - 0.8 1.2
V
Ch-2 - 0.58 0.87
Body Diode Reverse Recovery Time t
rr
Channel-1
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/μs, T
J
= 25 °C
Ch-1 - 30 60
ns
Ch-2 - 50 100
Body Diode Reverse Recovery Charge Q
rr
Ch-1 - 11 20
nC
Ch-2 - 28 60
Reverse Recovery Fall Time t
a
Ch-1 - 18 -
ns
Ch-2 - 28 -
Reverse Recovery Rise Time t
b
Ch-1 - 12 -
Ch-2 - 22 -
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
P1-P3P4-P6P7-P9P10-P12P13-P14

SIZ980DT-T1-GE3

Mfr. #:
Buy SIZ980DT-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V Vds 20V Vgs PowerPAIR 6 x 5
Lifecycle:
New from this manufacturer.
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