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IPB120N03S4L03ATMA1
P1-P3
P4-P6
P7-P9
IPB120N03S4
L-03
1 Power dissipation
2 Drain current
P
tot
=
f
(
T
C
);
V
GS
≥ 6 V
I
D
=
f
(
T
C
);
V
GS
≥ 6 V
3 Safe operating area
4 Max. transient thermal impedance
I
D
=
f
(
V
DS
);
T
C
=
25
°C;
D
=
0
Z
thJC
=
f
(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
1
µs
10
µs
100
µs
1
ms
1
10
100
1000
0.1
1
10
100
V
DS
[V]
I
D
[A]
limited
by
on-state
resistance
singl
e
pulse
0.01
0.05
0.1
0.5
10
1
10
0
10
-1
10
-2
t
p
[s]
Z
thJC
[K/W]
0
10
20
30
40
50
60
70
80
90
0
50
100
150
200
T
C
[°C]
P
tot
[W]
0
20
40
60
80
100
120
140
0
5
0
100
150
200
T
C
[°C]
I
D
[A]
Rev.
1.1
page
4
2014-04-28
IPB120N03S4
L-03
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I
D
=
f
(
V
DS
);
T
j
=
25
°C
R
DS(on)
=
(
I
D
);
T
j
=
25
°C
parameter:
V
GS
parameter:
V
GS
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I
D
=
f
(
V
GS
);
V
DS
=
6V
R
DS(on)
=
f
(
T
j
);
I
D
=
100
A;
V
GS
=
10
V
parameter:
T
j
I
D
=
60
A;
V
GS
=
4.5
V
1
2
3
4
5
6
-60
-20
20
60
100
14
0
180
T
j
[°C]
R
DS(on)
[m
W
]
4.5
V
10
V
-55
°C
25
°C
175
°C
0
40
80
120
160
200
240
280
320
360
400
440
480
1
2
3
4
5
6
V
GS
[V]
I
D
[A]
3
V
4
V
5
V
10
V
5.5
V
4.5
V
3.5
V
0
40
80
120
160
200
240
280
320
360
400
440
480
0
2
4
6
8
V
DS
[V]
I
D
[A]
5
V
5.5
V
6
V
8
V
10
V
2.5
3
3.5
4
0
20
40
60
80
100
120
I
D
[A
]
R
DS(on)
[m
W
]
4.5
V
Rev.
1.1
page
5
2014-04-28
IPB120N03S4
L-03
9 Typ. gate threshold voltag
e
10 Typ. capacitances
V
GS(th)
=
f
(
T
j
);
V
GS
=
V
DS
C
=
f(
V
DS
);
V
GS
=
0
V;
f
=
1
MHz
parameter:
I
D
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF
=
f(V
SD
)
I
AS
=
f
(
t
AV
)
parameter:
T
j
parameter:
T
j(start)
25°C
100°C
150°C
1
10
100
1000
1
1
0
100
1000
t
AV
[µs]
I
AV
[A]
25
°C
175
°C
10
3
10
2
10
1
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
[V]
I
F
[A]
Ciss
Coss
Crss
10
3
10
2
10
10
1
0
5
10
15
2
0
25
30
V
DS
[V]
C
[pF]
40µA
400µA
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
-60
-20
20
60
100
140
180
T
j
[°C]
V
GS(th)
[V]
Rev.
1.1
page
6
2014-04-28
P1-P3
P4-P6
P7-P9
IPB120N03S4L03ATMA1
Mfr. #:
Buy IPB120N03S4L03ATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_30/40V
Lifecycle:
New from this manufacturer.
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