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IXYS reserves the right to change limits, test conditions and dimensions.
GBO 25
427
V
RSM
V
RRM
Standard
V V Types
1300 1200 GBO 25-12NO1
1700 1600 GBO 25-16NO1
Features
•V
RRM
up to 1600 V
• Low forward voltage drop
• Planar passivated chips
• Low forward voltage drop
• Epoxy meets UL 94V-0
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with one screw
• Space and weight savings
Symbol Conditions Maximum Ratings
I
dAVM
① T
C
= 80°C, sine 180° 25 A
I
dAVM
② T
C
= 25°C, sine 180° 5 A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 370 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 390 A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 320 A
V
R
= 0 t = 8.3 ms (60 Hz), sine 340 A
I
2
t T
VJ
= 45°C t = 10 ms (50 Hz), sine 680 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 640 A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine 510 A
2
s
V
R
= 0 t = 8.3 ms (60 Hz), sine 470 A
2
s
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+125 °C
P
tot
16 W
M
d
Mounting torque (M3) 0.5-0.8 Nm
Weight typ. 7 g
I
dAV
= 25 A
V
RRM
= 1200-1600 V
Data according to IEC 60747 and refer to a single diode unless otherwise stated
I
dAVM
= bridge output current for resistive load ① mounted on heatsink; ② without heatsink
Symbol Conditions Characteristic Values
I
R
V
R
= V
RRM
;T
VJ
= 25°C ≤ 0.05 mA
V
R
= V
RRM
;T
VJ
= T
VJM
≤ 1.5 mA
V
F
I
F
= 12.5 A; T
VJ
= 25°C ≤ 1.1 V
V
T0
For power-loss calculations only 0.89 V
r
T
T
VJ
= T
VJM
12.2 mΩ
R
thJC
per diode, DC current 4.3 K/W
per module 1.1 K/W
R
thJA
per diode, DC current 50 K/W
per module 12.5 K/W
d
S1
, d
A1
Creeping/Striking distance leads to heatsink 2.9 mm
d
S1
, d
A1
Creeping/Striking distance lead to lead 5.6 mm
a Max. allowable acceleration 50 m/s
2
Single Phase
Rectifier Bridge
+
–
~
~
