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SI1022R-T1-E3

P1-P3P4-P6P7-P7
Vishay Siliconix
Si1022R
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
www.vishay.com
1
N-Channel 60 V (D-S) MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFETs
• Low On-Resistance: 1.25
• Low Threshold: 2.5 V
• Low Input Capacitance: 30 pF
• Fast Switching Speed: 25 ns
• Low Input and Output Leakage
• Miniature Package
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid State Relays
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Low Error Voltage
• Small Board Area
PRODUCT SUMMARY
V
DS(min.)
(V) R
DS(on)
()V
GS(th)
(V) I
D
(mA)
60
1.25 at V
GS
= 10 V
1 to 2.5 330
Notes:
a. Surface mounted on FR4 board, power applied for t 10 s.
Marking Code: E
SC-75A
(SOT-416)
1
2
3
G
S
D
Ordering Information: Si1022R-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
± 20
Continuous Drain Current
a
T
A
= 25 °C
I
D
330
mA
T
A
= 85 °C
240
Pulsed Drain Current
a
I
DM
650
Power Dissipation
a
T
A
= 25 °C
P
D
250
mW
T
A
= 85 °C
130
Thermal Resistance, Maximum Junction-to-Ambient
a
R
thJA
500 °C/W
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
www.vishay.com
2
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
Vishay Siliconix
Si1022R
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 10 µA
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 0.25 mA
12.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 10 V
± 150
nA
T
J
= 85 °C
± 500
V
DS
= 0 V, V
GS
= ± 5 V
± 20
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 50 V, V
GS
= 0 V
10
T
J
= 85 °C
100
V
DS
= 60 V, V
GS
= 0 V
1µA
On-State Drain Current
a
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V 500
mA
V
DS
= 7.5 V, V
GS
= 10 V 800
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 4.5 V, I
D
= 200 mA
3.0
T
J
= 125 °C
5.0
V
GS
= 10 V, I
D
= 500 mA
1.25
T
J
= 125 °C
2.25
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 200 mA
100 mS
Diode Forward Voltage
a
V
SD
V
GS
= 0 V, I
S
= 200 mA
1.3 V
Dynamic
b
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
30
pFOutput Capacitance
C
oss
6
Reverse Transfer Capacitance
C
rss
2.5
Gate Charge
Q
g
V
DS
= 10 V, I
D
= 250 mA, V
GS
= 4.5 V
0.6
nC
Switching
b, c
Tur n - On T im e
t
(on)
V
DD
= 30 V, R
L
= 150 ,
I
D
= 200 mA, V
GEN
= 10 V, R
g
= 10
25
ns
Turn-Off Time
t
(off)
35
Document Number: 71331
S10-2687-Rev. F, 22-Nov-10
www.vishay.com
3
Vishay Siliconix
Si1022R
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1.0
012345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V thru 7 V
3 V
5 V
4 V
6 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 200 400 600 800 1000
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
V
DS
= 10 V
I
D
= 250 mA
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
300
600
900
1200
0123456
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
T
J
= - 55 °C
125 °C
25 °C
0
10
20
30
40
50
0510152025
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
f = 1 MHz
0.0
0.4
0.8
1.2
1.6
2.0
- 50 - 25 0 25 50 75 100 125 150
T
J
- Junction Temperature (°C)
V
GS
= 10 V at 500 mA
V
GS
= 4.5 V
at 200 mA
(Normalized)
- On-ResistanceR
DS(on)
P1-P3P4-P6P7-P7

SI1022R-T1-E3

Mfr. #:
Buy SI1022R-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI1022R-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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