2 www.irf.com © 2013 International Rectifier March 15, 2013
IRGP4063DPbF/IRGP4063D-EPbF
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 200μH, R
G
= 10Ω.
This is only applied to TO-247AC package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
600——V
V
GE
= 0V, I
C
= 150μA
CT6
ΔV
(BR)CES
/ΔT
J
Temperature Coeff. of Breakdown Voltage —0.30—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-175°C) CT6
—1.652.14
I
C
= 48A, V
GE
= 15V, T
J
= 25°C
5,6,7
V
CE(on)
Collector-to-Emitter Saturation Voltage — 2.0 — V
I
C
= 48A, V
GE
= 15V, T
J
= 150°C
9,10,11
—2.05—
I
C
= 48A, V
GE
= 15V, T
J
= 175°C
V
GE(th)
Gate Threshold Voltage 4.0 — 6.5 V
V
CE
= V
GE
, I
C
= 1.4mA
9, 10,
Δ
V
GE(th)
/
Δ
TJ
Threshold Voltage temp. coefficient — -21 — mV/°C
V
CE
= V
GE
, I
C
= 1.0mA (25°C - 175°C)
11, 12
gfe Forward Transconductance — 32 — S
V
CE
= 50V, I
C
= 48A, PW = 80μs
I
CES
Collector-to-Emitter Leakage Current — 1.0 150 μA
V
GE
= 0V, V
CE
= 600V
— 450 1000
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 1.95 2.91 V
I
F
= 48A
8
—1.45—
I
F
= 48A, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Ref.Fig
Q
g
Total Gate Charge (turn-on) — 95 140
I
C
= 48A
24
Q
ge
Gate-to-Emitter Charge (turn-on) — 28 42 nC
V
GE
= 15V CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 35 53
V
CC
= 400V
E
on
Turn-On Switching Loss — 625 1141
I
C
= 48A, V
CC
= 400V, V
GE
= 15V CT4
E
off
Turn-Off Switching Loss — 1275 1481 μJ
R
G
= 10Ω, L = 200μH, L
S
= 150nH, T
J
= 25°C
E
total
Total Switching Loss — 1900 2622
Energy losses include tail & diode reverse recovery
t
d(on)
Turn-On delay time — 60 78
I
C
= 48A, V
CC
= 400V, V
GE
= 15V
CT4
t
r
Rise time — 40 56 ns
R
G
= 10
, L = 200μH, L
S
= 150nH, T
J
= 25°C
t
d(off)
Turn-Off delay time — 145 176
t
f
Fall time — 35 46
E
on
Turn-On Switching Loss — 1625 —
I
C
= 48A, V
CC
= 400V, V
GE
=15V
13, 15
E
off
Turn-Off Switching Loss — 1585 — μJ
R
G
=10
, L=200μH, L
S
=150nH, T
J
= 175°C CT4
E
total
Total Switching Loss — 3210 —
Energy losses include tail & diode reverse recovery WF1, WF2
t
d(on)
Turn-On delay time — 55 —
I
C
= 48A, V
CC
= 400V, V
GE
= 15V 14, 16
t
r
Rise time — 45 — ns
R
G
= 10Ω, L = 200μH, L
S
= 150nH
CT4
t
d(off)
Turn-Off delay time — 165 —
T
J
= 175°C WF1
t
f
Fall time — 45 —
WF2
C
ies
Input Capacitance — 3025 — pF
V
GE
= 0V 23
C
oes
Output Capacitance — 245 —
V
CC
= 30V
C
res
Reverse Transfer Capacitance — 90 — f = 1.0Mhz
T
J
= 175°C, I
C
= 192A
4
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
V
CC
= 480V, Vp =600V
CT2
Rg = 10Ω, V
GE
= +15V to 0V
SCSOA Short Circuit Safe Operating Area 5 — — μs
V
CC
= 400V, Vp =600V 22, CT3
Rg = 10Ω, V
GE
= +15V to 0V
WF4
Erec Reverse Recovery Energy of the Diode — 845 — μJ
T
J
= 175°C
17, 18, 19
t
rr
Diode Reverse Recovery Time — 115 — ns
V
CC
= 400V, I
F
= 48A
20, 21
I
rr
Peak Reverse Recovery Current — 40 — A
V
GE
= 15V, Rg = 10
, L =200μH, L
s
= 150nH WF3
Conditions
